2SC4986

Power Transistors 2SC4986 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 7.5±0.2 4.5±0.2 3.8±0.2 s Features 10.8±0.2 q High collector to base voltage VCBO q High collector to emitter VCEO q Allowing automatic insertion with radial taping 2.5±0.1 90° 0.65±0.1 0.85±0.1 1.0±0.1 0.8C 0.8C 0.7±0.1 0.7±0.1 / s Absolute Maximum Ratings (Ta=25˚C) e ) Parameter Symbol Ratings Unit 16.0±1.0 c type Collector to base voltage VCBO 500 V n d tage. ued Collector to emitter voltage VCEO 400 V le s ontin Emitter to base voltage VEBO 7 V a elifecyc disc Peak collector current ICP 4 A n u t ed, Collector current IC 2 A roduc d typ Collector power dissipation PC 1.5 W te tin ur P tinue Junction temperature Tj 150 ˚C g fo con Storage temperature Tstg –55 to +150 ˚C 2.5±0.2 0.8C 0.5±0.1 2.5±0.2 0.4±0.1 2.05±0.2 123 1:Emitter 2:Collector 3:Base MT3 Type Package ain on s des foll,opwlianned dis Electrical Characteristics (Ta=25˚C) c d inclu e type Parameter Symbol Conditions min typ max Unit tinue anc Collector cutoff current ICBO M is con inten Emitter cutoff current IEBO /Dis , ma hFE1 e e Forward current transfer ratio D anc typ hFE2 VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 100mA VCE = 5V, IC = 1A 100 µA 100 µA 15 8 inten nce Collector to emitter saturation voltage VCE(sat) Ma tena Base to emitter saturation voltage VBE(sat) IC = 1A, IB = 0.2A IC = 1A, IB = 0.2A ...