D1140

2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm · High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 10 1.5 50 900 150 −55 to 150 Unit V V V A mA mW °C °C Equivalent Circuit BASE COLLECTOR JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.) EMITTER 1 2003-02-04 2SD1140 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 150 mA IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA Min Typ. Max Unit ― ― 10 µA ― ― 10 µA 30 ― ― V 4000 ― ― ― 1.5 V ― 2.2 V Turn-on time ton 20 µs Input Output ― 0.2 ― IB1 IB2 15 Ω Switching time Storage time Fall time Marking tstg VCC = 15 V tf IB1 = −IB2 = 1 mA, duty cycle ≤ 1% ― 0.6 ― µs ― ...