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SD253N Dataheets PDF



Part Number SD253N
Manufacturers International Rectifier
Logo International Rectifier
Description FAST RECOVERY DIODES
Datasheet SD253N DatasheetSD253N Datasheet (PDF)

Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK To Order Previous Datasheet Index Next Data Sheet Bulletin I2065/A SD253N/R SERIES FAST RECOVERY DIODES Features High power FAST recovery diode series 1.5 to 2.0 µs recovery time High voltage ratings up to 1600V High current capability Optimized turn on and turn off characteristics Low forward recovery Fast and soft reverse recovery Compression bonded encapsulation Stud version JEDEC DO-205AB (DO-9) M.

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Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK To Order Previous Datasheet Index Next Data Sheet Bulletin I2065/A SD253N/R SERIES FAST RECOVERY DIODES Features High power FAST recovery diode series 1.5 to 2.0 µs recovery time High voltage ratings up to 1600V High current capability Optimized turn on and turn off characteristics Low forward recovery Fast and soft reverse recovery Compression bonded encapsulation Stud version JEDEC DO-205AB (DO-9) Maximum junction temperature 125°C Stud Version 250A Typical Applications Snubber diode for GTO High voltage free-wheeling diode Fast recovery rectifier applications Major Ratings and Characteristics Parameters IF(AV) @ TC IF(RMS) IFSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V RRM range trr range @ TJ TJ SD253N/R 250 85 392 5350 5600 143 130 400 to 1600 1.5 to 2.0 25 - 40 to 125 Units A °C A A A KA2s KA2s V µs °C °C case style DO-205AB (DO-9) To Order PreviousSeries Datasheet SD253N/R ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 04 SD253N/R..S15 08 10 12 SD253N/R..S20 14 16 Index Next Data Sheet V RRM max. repetitive peak and off-state voltage V 400 800 1000 1200 1400 1600 VRSM , maximum nonrepetitive peak voltage V 500 900 1100 1300 1500 1700 I RRM max. TJ = 125°C mA 35 Forward Conduction Parameter I F(AV) Max. average forward current @ Case temperature I F(RMS) Max. RMS current I FSM Max. peak, one-cycle non-repetitive forward current 12 SD253N/R 250 85 392 5350 5600 4500 4710 A Units A °C A Conditions 180° conduction, half sine wave. DC @ 74°C case temperature t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. I 2t Maximum I2 t for fusing 143 130 101 92 KA2s t = 8.3ms t = 10ms t = 8.3ms I 2√ t Maximum I2√t for fusing 1430 0.87 1.17 0.62 0.29 1.38 KA2√s V mΩ V t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. (I > π x IF(AV)), TJ = TJ max. (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. (I > π x IF(AV)), TJ = TJ max. V F(TO)1 Low level of threshold voltage V F(TO) 2 High level of threshold voltage r f1 r f2 V FM Low level of forward slope resistance High level of forward slope resistance Max. forward voltage 2222222222222 Ipk= 785A, TJ = 25°C, tp = 400 µs square pulse Recovery Characteristics Code TJ = 25 oC typical t (µs) rr Test conditions I pk Max. values @ TJ = 125 °C V r di/dt (A/µs) t rr Q rr I rr @ 25% IRRM Square Pulse (A) (V) @ 25% IRRM (µs) 2.9 (µC) 90 107 (A) 44 46 S15 S20 1.5 750 2.0 25 - 30 3.2 To Order Previous Datasheet Index Next SD253N/R Data Sheet Series Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics Fig. 5 - Maximum Non-repetitive Surge Current To Order Fig. 6 - Maximum Non-repetitive Surge Current Previous Datasheet SD253N/R Series Index Next Data Sheet Fig. 7 - Forward Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 9 - Recovery Time Characteristics Fig. 10 - Recovery Charge Characteristics Fig. 11 - Recovery Current Characteristics To Order Fig. 12 - Recovery Time Characteristics Fig. 13 - Recovery Charge Characteristics Fig. 14 - Recovery Current Characteristics Previous Datasheet Index Next SD253N/R Data Sheet Series Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 16 - Maximum Total Energy Loss Per Pulse Characteristics To Order Previous Datasheet Index Next Data Sheet SD253N/R Series Thermal and Mechanical Specification Parameter TJ Tstg Max. operating temperature range Max. storage temperature range SD253N/R -40 to 125 -40 to 150 0.115 0.08 31 24.5 Units °C Conditions RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque ± 10% K/W DC operation Mounting surface, smooth, flat and greased Nm g Not lubricated threads Lubricated threads wt Approximate weight Case style 250 DO-205AB (DO-9) See Outline Table ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle 180° 120° 90° 60° 30° Sinusoidal conduction Rectangular conduction Units 0.010 0.013 0.017 0.025 0.044 0.008 0.014 0.019 0.027 0.044 K/W Conditions TJ = TJ max. 23 Ordering Information Table Device Code SD 1 1 2 3 4 Diode Essential part number 3 = Fast recovery 25 2 3 3 R 4 16 S20 5 6 P 7 B 8 V 9 N = Stud Normal Polarity (Cathode to Stud) R = Stud Reverse Polarity (Anode to Stud) 5 6 7 - Voltage code: Code x 100 = V RRM (see Voltage Ratings table) trr code (see Recovery Characteristics table) P = Stud base DO-205AB (DO-9) 3/4" 16UNF-2A M = Stud base DO-205AB (DO-9) M16 X 1.5 8 -7 B = Flag top terminals (for Catho.


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