2SK3457

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3457 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3457 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. ORDERING INFORMATION PART NUMBER 2SK3457 PACKAGE Isolated TO-220 FEATURES Low gate charge QG = 24 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.0 A) Gate voltage rating ±30 V Low on-state resistance RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 3.0 A) Avalanche capability ratings Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 800 ±30 ±5.0 ±20 2.0 50 150 –55 to +150 5.0 73.8 V V A A W W °C °C A mJ Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 ¡ 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14754EJ1V0DS00 (1st edition) Date Published...