MRF177

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF177/D The RF MOSFET Line RF Power Field Effect Transistors MRF177 100 W, 28 V, 400 MHz N–CHANNEL BROADBAND RF POWER MOSFET N–Channel Enhancement Mode MOSFET Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. Typical Performance at 400 MHz, 28 V: Output Power — 100 W Gain — 12 dB Efficiency — 60% Low Thermal Resistance Low Crss — 10 pF Typ @ VDS = 28 Volts Ruggedness Tested at Rated Output Power Nitride Passivated Die for Enhanced Reliability Excellent Thermal Stability; Suited for Class A Operation Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. 6 5, 8 7 1, 4 2 3 CASE 744A–01, STYLE 2 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Operating Temperature Range Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ±40 16 270 1.54 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Symbol Max 0.65 Unit °C/W Thermal Resistance, Junction–to–Case RθJC (1) Total device dissipation rating applies only when the device is operated as an RF push–pull amplifier. NOTE — CAUTION...