MRF175LU

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF175LU/D The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Guaranteed Performance MRF175LU @ 28 V, 400 MHz (“U” Suffix) Output Power — 100 Watts Power Gain — 10 dB Typ Efficiency — 55% Typ MRF175LV @ 28 V, 225 MHz (“V” Suffix) Output Power — 100 Watts Power Gain — 14 dB Typ Efficiency — 65% Typ 100% Ruggedness Tested At Rated Output Power Low Thermal Resistance Low Crss — 20 pF Typ @ VDS = 28 V G S MRF175LU MRF175LV 100 W, 28 V, 400 MHz N–CHANNEL BROADBAND RF POWER FETs D CASE 333–04, STYLE 2 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value 65 ±40 13 270 1.54 –65 to +150 200 Unit Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.65 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 50 mA) Zero Gate Voltage Drain Curren...