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MRF175GV Dataheets PDF



Part Number MRF175GV
Manufacturers Tyco Electronics
Logo Tyco Electronics
Description (MRF175GU/GV) N-CHANNEL MOS BROADBAND RF POWER FETs
Datasheet MRF175GV DatasheetMRF175GV Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF175GU/D The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance MRF175GV @ 28 V, 225 MHz (“V” Suffix) Output Power — 200 Wat.

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SEMICONDUCTOR TECHNICAL DATA Order this document by MRF175GU/D The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance MRF175GV @ 28 V, 225 MHz (“V” Suffix) Output Power — 200 Watts Power Gain — 14 dB Typ Efficiency — 65% Typ MRF175GU @ 28 V, 400 MHz (“U” Suffix) Output Power — 150 Watts Power Gain — 12 dB Typ Efficiency — 55% Typ • 100% Ruggedness Tested At Rated Output Power • Low Thermal Resistance • Low Crss — 20 pF Typ @ VDS = 28 V G G S (FLANGE) MRF175GU MRF175GV 200/150 WATTS, 28 V, 500 MHz N–CHANNEL MOS BROADBAND RF POWER FETs D CASE 375–04, STYLE 2 D MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 65 65 ±40 26 400 2.27 –65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Max 0.44 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain–Source Breakdown Voltage (VGS = 0, ID = 50 mA) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) Gate–Source Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 65 — — — — — — 2.5 1.0 Vdc mAdc µAdc (continued) Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 8 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) Drain–Source On–Voltage (VGS = 10 V, ID = 5.0 A) Forward Transconductance (VDS = 10 V, ID = 2.5 A) VGS(th) VDS(on) gfs 1.0 0.1 2.0 3.0 0.9 3.0 6.0 1.5 — Vdc Vdc mhos DYNAMIC CHARACTERISTICS (1) Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss Coss Crss — — — 180 200 20 — — — pF pF pF FUNCTIONAL CHARACTERISTICS — MRF175GV (2) (Figure 1) Common Source Power Gain (VDD = 28 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA) Drain Efficiency (VDD = 28 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA) Electrical Ruggedness (VDD = 28 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA, VSWR 10:1 at all Phase Angles) NOTES: 1. Each side of device measured separately. 2. Measured in push–pull configuration. Gps η ψ No Degradation in Output Power 12 55 14 65 — — dB % R1 BIAS 0-6 V C3 C4 C8 C9 L2 C10 + 28 V - R2 D.U.T. T1 T2 L1 C5 C1 C2 C6 C7 C1 — Arco 404, 8.0–60 pF C2, C3, C7, C8 — 1000 pF Chip C4, C9 — 0.1 µF Chip C5 — 180 pF Chip C6 — 100 pF and 130 pF Chips in Parallel C10 — 0.47 µF Chip, Kemet 1215 or Equivalent L1 — 10 Turns AWG #16 Enamel Wire, Close L1 — Wound, 1/4″ I.D. L2 — Ferrite Beads of Suitable Material for L2 — 1.5ā–ā2.0 µH Total Inductance Board material — .062″ fiberglass (G10), Two sided, 1 oz. copper, εr ^ 5 Unless otherwise noted, all chip capacitors are ATC Type 100 or Equivalent. R1 — 100 Ohms, 1/2 W R2 — 1.0 k Ohm, 1/2 W T1 — 4:1 Impedance Ratio RF Transformer. T1 — Can Be Made of 25 Ohm Semirigid Coax, T1 — 47–52 Mils O.D. T2 — 1:9 Impedance Ratio RF Transformer. T2 — Can Be Made of 15–18 Ohms Semirigid T2 — Coax, 62–90 Mils O.D. NOTE: For stability, the input transformer T1 should be loaded NOTE: with ferrite toroids or beads to increase the common NOTE: mode inductance. For operation below 100 MHz. The NOTE: same is required for the output transformer. Figure 1. 225 MHz Test Circuit REV 8 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit FUNCTIONAL CHARACTERISTICS — MRF175GU (1) (Figure 2) Common Source Power Gain (VDD = 28 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA) Drain Efficiency (VDD = 28 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA) Electrical Ruggedness (VDD = 28 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA, VSWR 10:1 at all Phase Angles) NOTE: 1. Measured in push–pull configuration. Gps η ψ No Degradation in Output Power 10 50 12 55 — — dB % A B C14 L5 C15 L6 C18 L3 Z3 Z5 28 V BIAS C10 C11 C1 L1 R1 C12 R2 C13 C8 D.U.T. Z1 B1 C3 C4 C5 C6 C7 B2 C2 L2 Z2 Z4 Z6 C9 R3 A C16 L4 B C17 0.180″ B1 — Balun 50 Ω Semi Rigid Coax 0.086″ O.D. 2″ Long B2 — Balun 50 Ω Semi Rigid Coax 0.141″ O.D. 2″ Long C1, C2, C8, C9 — 270 pF ATC Chip Cap C3, C5, C7 — 1.0–20 pF Trimmer Cap C4 — 15 pF ATC Chip Cap C6 — 33 pF ATC Chip Cap C10, C12, .


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