MRF173

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF173/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. Guaranteed Performance at 150 MHz, 28 V: Output Power = 80 W Gain = 11 dB (13 dB Typ) Efficiency = 55% Min. (60% Typ) Low Thermal Resistance Ruggedness Tested at Rated Output Power Nitride Passivated Die for Enhanced Reliability Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz Excellent Thermal Stability; Suited for Class A Operation G S MRF173 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET D CASE 211–11, STYLE 2 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Temperature Range Symbol VDSS VDGO VGS ID PD Tstg TJ Value 65 65 ±40 9.0 220 1.26 –65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.8 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VDS = 0 V, VGS = 0 V) ID = 50 mA Zero Gate Voltage Drain Current ...