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FM680-T Dataheets PDF



Part Number FM680-T
Manufacturers Formosa MS
Logo Formosa MS
Description (FM620-T - FM6100-T) Chip Schottky Barrier Diodes - Silicon epitaxial planer type
Datasheet FM680-T DatasheetFM680-T Datasheet (PDF)

Chip Schottky Barrier Diodes FM620-T THRU FM6100-T Silicon epitaxial planer type Formosa MS SMC-T 0.276(7.0) 0.260(6.6) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.032(0.8) Typ. 0.040(1.0) Typ. 0.152(3.8) 0.144(3.6) 0.189(4.8) 0.173(4.4) 0.244(6.2) 0.228(5.8) 0.087(2.2) 0.07.

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Chip Schottky Barrier Diodes FM620-T THRU FM6100-T Silicon epitaxial planer type Formosa MS SMC-T 0.276(7.0) 0.260(6.6) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.032(0.8) Typ. 0.040(1.0) Typ. 0.152(3.8) 0.144(3.6) 0.189(4.8) 0.173(4.4) 0.244(6.2) 0.228(5.8) 0.087(2.2) 0.071(1.8) 0.040 (1.0) Typ. Mechanical data Case : Molded plastic, JEDE C DO-214AB Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting P osition : Any Weight : 0.00585 ounce, 0.195 gr am Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C IR Rq JA CJ TSTG -55 15 380 +150 CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 6.0 150 0.5 50 o UNIT A A mA mA C / w pF o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage C SYMBOLS MARKING CODE SS62 SS63 SS64 SS65 SS66 SS68 S610 V RRM *1 V RMS *2 VR *3 VF *4 Operating temperature (o C) (V) FM620-T FM630-T FM640-T FM650-T FM660-T FM680-T FM6100-T 20 30 40 50 60 80 100 (V) 14 21 28 35 42 56 70 (V) 20 30 40 50 60 80 100 (V) 0.55 -55 to +125 *1 Repetitive peak reverse voltage 0.70 -55 to +150 0.85 *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage RATING AND CHARACTERISTIC CURVES (FM620-T THRU FM6100-T) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CHARACTERISTICS 6.0 5.0 50 INSTANTANEOUS FORWARD CURRENT,(A) 0-T ~F M6 40 0-T -T ~F FM M 68 66 0-T 0T~ FM 61 00 -T FM 65 4.0 65 FM 62 FM 3.0 2.0 1.0 0 0 20 40 60 10 3.0 1.0 61 FM T~ 000 -T 64 FM T~ 0T 0- 80 100 120 140 160 180 200 AMBIENT TEMPERATURE,( C) FM 62 Tj=25 C Pulse Width 300us 1% Duty Cycle FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 150 0.1 PEAK FORWARD SURGE CURRENT,(A) 120 .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 90 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method FORWARD VOLT AGE,(V) 60 30 FIG.5 - TYPICAL REVERSE 0 1 5 10 50 100 CHARACTERISTICS 100 NUMBER OF CYCLES AT 60Hz FIG.4-TYPICAL JUNCTION CAPACITANCE 1400 1200 1000 800 600 400 200 0 JUNCTION CAPACITANCE,(pF) REVERSE LEAKAGE CURRENT, (mA) 10 Tj=75 C 1.0 .1 Tj=25 C .01 .05 .1 .5 1 5 10 50 100 .01 0 20 40 60 80 100 120 140 REVERSE VOLTAGE,(V) PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) .


1110UFA FM680-T PE608N


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