(FM620-T - FM6100-T) Chip Schottky Barrier Diodes - Silicon epitaxial planer type
Chip Schottky Barrier Diodes
FM620-T THRU FM6100-T
Silicon epitaxial planer type
Formosa MS
SMC-T
0.276(7.0) 0.260(6.6...
Chip
Schottky Barrier Diodes
FM620-T THRU FM6100-T
Silicon epitaxial planer type
Formosa MS
SMC-T
0.276(7.0) 0.260(6.6) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.
0.032(0.8) Typ. 0.040(1.0) Typ. 0.152(3.8) 0.144(3.6)
0.189(4.8) 0.173(4.4)
0.244(6.2) 0.228(5.8)
0.087(2.2) 0.071(1.8)
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDE C DO-214AB Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting P osition : Any Weight : 0.00585 ounce, 0.195 gr am
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C IR Rq JA CJ TSTG -55 15 380 +150 CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 6.0 150 0.5 50
o
UNIT A A mA mA C / w pF
o
Reverse current Thermal resistance Diode junction capacitance Storage temperature
VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage
C
SYMBOLS
MARKING CODE SS62 SS63 SS64 SS65 SS66 SS68 S610
V RRM
*1
V RMS
*2
VR
*3
VF
*4
Operating temperature (o C)
(V) FM620-T FM630-T FM640-T FM650-T FM660-T FM680-T FM6100-T 20 30 40 50 60 80 100
(V) ...