SCP25C60

SemiWell Semiconductor SCP25C60 Symbol 3. Gate ○ ○ Silicon Controlled Rectifiers ▼ 1 2 3 Features Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 25 A ) ◆ Low On-State Voltage (1.3V(Typ.)@ ITM) ◆ Non-isolated Type ◆ ○ 2. Anode 1. Cathode TO-220 General Description Standard gate triggering SCR is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. Absolute Maximum Ratings Symbol VDRM IT(AV) IT(RMS) ITSM I2 t di/dt PGM PG(AV) IFGM VRGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings 600 Half Sine Wave : TC = 97 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms 16 25 275 380 50 20 1 5 5.0 - 40 ~ 125 - 40 ~ 150 Parameter Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Critical rate of rise of on-state current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature Units V A A A A2 s A/㎲ W W A V °C °C Aug, 2003. Rev. 2 1/5 Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved. SCP25C60 Electrical Characteristics Symbol Items VAK = VDRM TC = 25 °C TC = 125 °C ITM = 50 A VAK = 6 V(DC), RL=10 Ω IGT Gate Trigger C...