1608 Size/ 0.8mm Thickness/ Leadless Chip LED Devices
Leadless Chip LED Device
LT1t67A series
LT1t67A series
s Outline Dimensions
(Unit : mm)
1608 Size, 0.8mm Thickness, L...
Description
Leadless Chip LED Device
LT1t67A series
LT1t67A series
s Outline Dimensions
(Unit : mm)
1608 Size, 0.8mm Thickness, Leadless Chip LED Devices
s Radiation Diagram
(Ta=25˚C)
0.8±0.15
-20˚
1.6±0.15 0.8
0˚ 100
Relative luminous intensity(%)
+20˚ +40˚
-40˚
80 60 +60˚ 40 20 0
X
1
2 Recommended PWB pattern for soldering 1.2 1.0 0.5 0.8 0.85 0.8 Device center 0.8
-60˚
-80˚
+80˚
0.3
-20˚ -40˚
Relative luminous intensity(%) 1.Plating area Resist 2.Pin connections 1 Cathode 2 Anode 1 3.Unspecified tolerance:±0.1
0˚ 100 80 60
+20˚ +40˚
(0.3) (0.4)
(0.3)
2
-60˚
+60˚ 40 20 0
Y
(0.3)
Chip side mark
-80˚
+80˚
U type: There is Anode mark on the device because polarity faces in the opposite direction.
s Absolute Maximum Ratings
Power dissipation Forward current Peak forward current P IF IFM*1 Model No. Radiation color Radiation material (mW) (mA) (mA)
(Ta=25˚C) Derating factor Reverse voltage Operating temperature Storage temperature Soldering temperature (mA/˚C) VR Topr Tstg Tsol*2 (V) (˚C) (˚C) (˚C) DC Pulse -30 to +85 -30 to +85 -30 to +85 -30 to +85 -30 to +85 -30 to +85 -30 to +85 -30 to +85 -40 to +100 -40 to +100 -40 to +100 -40 to +100 -40 to +100 -40 to +100 -40 to +100 -40 to +100 350 350 350 350 350 350 350 350
4 0.40 0.67 50 30 75 LT1U67A Red(Super-luminosity) GaAlAs on GaAlAs 5 0.13 0.67 50 10 23 GaP LT1P67A Red 5 0.40 0.67 50 30 84 GaAsP on GaP LT1D67A Red 5 0.40 0.67 50 30 84 LT1S67A Sunset orange GaAsP on GaP 5 0.40 0.67 50 30 84 GaAsP on GaP LT1...
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