LT1S67A

Leadless Chip LED Device LT1t67A series LT1t67A series s Outline Dimensions (Unit : mm) 1608 Size, 0.8mm Thickness, Leadless Chip LED Devices s Radiation Diagram (Ta=25˚C) 0.8±0.15 -20˚ 1.6±0.15 0.8 0˚ 100 Relative luminous intensity(%) +20˚ +40˚ -40˚ 80 60 +60˚ 40 20 0 X 1 2 Recommended PWB pattern for soldering 1.2 1.0 0.5 0.8 0.85 0.8 Device center 0.8 -60˚ -80˚ +80˚ 0.3 -20˚ -40˚ Relative luminous intensity(%) 1.Plating area Resist 2.Pin connections 1 Cathode 2 Anode 1 3.Unspecified tolerance:±0.1 0˚ 100 80 60 +20˚ +40˚ (0.3) (0.4) (0.3) 2 -60˚ +60˚ 40 20 0 Y (0.3) Chip side mark -80˚ +80˚ U type: There is Anode mark on the device because polarity faces in the opposite direction. s Absolute Maximum Ratings Power dissipation Forward current Peak forward current P IF IFM*1 Model No. Radiation color Radiation material (mW) (mA) (mA) (Ta=25˚C) Derating factor Reverse voltage Operating temperature Storage temperature Soldering temperature (mA/˚C) VR Topr Tstg Tsol*2 (V) (˚C) (˚C) (˚C) DC Pulse -30 to +85 -30 to +85 -30 to +85 -30 to +85 -30 to +85 -30 to +85 -30 to +85 -30 to +85 -40 to +100 -40 to +100 -40 to +100 -40 to +100 -40 to +100 -40 to +100 -40 to +100 -40 to +100 350 350 350 350 350 350 350 350 4 0.40 0.67 50 30 75 LT1U67A Red(Super-luminosity) GaAlAs on GaAlAs 5 0.13 0.67 50 10 23 GaP LT1P67A Red 5 0.40 0.67 50 30 84 GaAsP on GaP LT1D67A Red 5 0.40 0.67 50 30 84 LT1S67A Sunset orange GaAsP on GaP 5 0.40 0.67 50 30 84 GaAsP on GaP LT1...