KMZ10A

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D329 KMZ10A Magnetic field sensor Product specification Supersedes data of 1996 Nov 08 File under Discrete Semiconductors, SC17 1998 Mar 24 Philips Semiconductors Product specification Magnetic field sensor DESCRIPTION The KMZ10A is an extremely sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for navigation, current and field measurement, revolution counters, angular or linear position measurement and proximity detectors, etc. PINNING PIN 1 2 3 4 SYMBOL +VO GND −VO VCC DESCRIPTION output voltage ground output voltage supply voltage Fig.1 Simplified outline. 1 2 3 4 MBA737 KMZ10A handbook, halfpage Hy Hx QUICK REFERENCE DATA SYMBOL VCC Tbridge Hy Hx S Rbridge Voffset PARAMETER bridge supply voltage bridge operating temperature magnetic field strength auxiliary field sensitivity bridge resistance offset voltage − −40 −0.5 − − 0.8 −1.5 MIN. 5 − − 0.5 16 − − TYP. − +150 +0.5 − − 1.6 +1.5 MAX. V °C kA/m kA/m mV ⁄ V ---------------kA ⁄ m kΩ mV/V UNIT CIRCUIT DIAGRAM handbook, full pagewidth MLC716 1 +VO 2 GND 3 –VO V 4 CC Fig.2 Simplified circuit diagram. 1998 Mar 24 2 Philips Semiconductors Product specification Magnetic field sensor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC Ptot Tstg Tbridge Note 1. Maximum operating temperature of the ...