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FLM8596-8F Dataheets PDF



Part Number FLM8596-8F
Manufacturers ETC
Logo ETC
Description Ku-Band Internally Matched FET
Datasheet FLM8596-8F DatasheetFLM8596-8F Datasheet (PDF)

FLM8596-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 8.5 ~ 9.6GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM8596-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highe.

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FLM8596-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 8.5 ~ 9.6GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM8596-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 42.8 -65 to +175 175 Unit V V W °C °C Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with gate resistance of 100Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IB Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch f = 9.6 GHz, ∆f = 10 MHz 2-Tone Test Pout = 28.5dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS =10V, IDS = 0.65 IDSS (Typ.), f = 8.5 ~ 9.6 GHz, ZS=ZL= 50 ohm Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 2200mA VDS = 5V, IDS = 170mA IGS = -170µA Min. -0.5 -5.0 38.5 6.5 -42 Limit Typ. Max. 3400 5200 3400 -1.5 39.0 7.5 -3.0 Unit mA mS V V dBm dB mA % dB dBc °C/W °C 2200 2600 29 -45 3.0 ±0.6 3.5 80 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level Edition 1.1 August 2004 1 FLM8596-8F X, Ku-Band Internally Matched FET POWER DERATING CURVE OUTPUT POWER & IM3 vs. INPUT POWER VDS=10V f1 = 9.6 GHz f2 = 9.61 GHz 2-tone test Pout 30 28 26 24 50 100 150 200 19 21 23 25 27 IM3 -15 -25 -35 -45 Total Power Dissipation (W) Output Power (S.C.L.) (dBm) 40 34 32 30 10 0 Case Temperature (°C) Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY 42 OUTPUT POWER vs. INPUT POWER VDS=10V f = 9.0 GHz Pout 36 34 32 ηadd 30 28 20 10 40 30 Output Power (dBm) VDS=10V P1dB Pin=33dBm 40 Output Power (dBm) 40 38 36 34 32 30 8.5 9.0 30dBm 28dBm 38 25dBm 22dBm 9.6 Frequency (GHz) 22 24 26 28 30 32 Input Power (dBm) 2 ηadd (%) IM3 (dBc) 20 FLM8596-8F X, Ku-Band Internally Matched FET +j50 +j25 9.2 9.0 9.2 9.4 9.6 9.4 9.6 9.7 GHz 9.7 GHz 250 S11 S22 +j100 +90° 4 3 2 8.4 1 8.5 8.6 9.2 8.8 8.5 8.6 9.2 9.0 8.8 S21 S12 +j10 +j250 9.7 GHz 9.7 GHz 9.6 9.6 9.4 8.8 8.8 9.0 SCALE FOR |S21| SCALE FOR |S12| 0.1 8.4 0.2 0 8.6 8.5 25 8.6 8.5 8.4 50Ω 180° 0° 9.0 -j10 8.4 -j250 9.4 -j25 -j50 -j100 -90° FREQUENCY (MHZ) 8400 8500 8600 8700 8800 8900 9000 9100 9200 9300 9400 9500 9600 9700 S11 MAG .868 .843 .800 .751 .701 .653 .615 .586 .561 .547 .532 .525 .513 .503 ANG -152.7 -166.6 179.4 165.6 152.1 138.8 126.1 113.4 101.0 88.4 75.9 62.6 49.0 34.5 S-PARAMETERS VDS = 10V, IDS = 2200mA S21 S12 MAG ANG MAG ANG 2.480 2.616 2.717 2.761 2.781 2.784 2.781 2.772 2.775 2.777 2.792 2.819 2.846 2.890 -19.5 -33.7 -47.9 -61.7 -75.3 -88.2 -100.6 -112.8 -124.5 -136.0 -147.5 -159.2 -170.9 177.1 .068 .068 .065 .062 .059 .059 .057 .058 .058 .059 .064 .066 .071 .075 50.9 25.4 0.9 -25.7 -49.8 -72.2 -93.0 -112.2 -129.4 -146.0 -160.7 -173.1 171.9 158.9 S22 MAG .426 .381 .340 .307 .289 .290 .308 .320 .338 .356 .364 .376 .383 .375 ANG -131.3 -151.8 -174.9 164.9 141.5 120.3 103.1 89.5 77.9 68.0 58.4 50.4 42.8 35.9 3 FLM8596-8F X, Ku-Band Internally Matched FET Case Style "IB" Metal-Ceramic Hermetic Package 2.0 Min. (0.079) 2-R 1.6±0.15 (0.063) 1 2 0.1 (0.004) 3 0.6 (0.024) 2.0 Min. (0.079) 2.6±0.15 (0.102) 5.2 Max. (0.205) 10.7 (0.421) 0.2 Max. (0.008) 1.45 (0.059) 12.9±0.2 (0.508) 12.0 (0.422) 17.0±0.15 (0.669) 21.0±0.15 (0.827) 1. Gate 2. Source (Flange) 3. Drain Unit: mm(inches) For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods s.


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