SD1414-12

® SD1414-12 RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS PRELIMINARY DATA s s s s 960 MHz 13.5 VOLTS COMMON BASE POUT = 40 W MIN. WITH 4.3 dB gain DESCRIPTION The SD1414-12 is a 13.5 V Class C Epitaxial silicon NPN planar transistor designed for amplifier applications up to 960 MHz. Internal input matching and common base configuration assure optimum gain and efficiency in broad band applications. .230 6LFL (M142) epoxy sealed ORDER CODE BRANDING SD1414-12 SD1414-12 PIN CONNECTION 1. Collector 2. Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V CBO V CEO V CES V EBO IC P DI SS Tj T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Max. O perating Junction Temperature Storage T emperature Value 36 18 36 4.0 9.0 150 +200 -65 to 150 3. Base Uni t V V V V A W o o C C THERMAL DATA R th (j-c) Junction-Case Thermal Resistance 1.2 o C/W December 1999 1/6 SD1414-12 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol BV CES BV CEO BV EBO I CBO h FE I C = 50 mA I C = 50 mA I E = 10 mA V CB = 15 V V CE = 5 V Parameter V BE = 0 V IB = 0 mA IC = 0 mA I E = 0 mA IC = 1 A 20 Min. 36 18 4.0 5 200 Typ . Max. Un it V V V mA DYNAMIC Symb ol P OUT GP ηC f = 960 MHz f = 960 MHz f = 960 MHz Parameter P IN = 15 W P IN = 15 W P IN = 15 W P IN = 15 W V CB = 13.5 V VCC = 13.5 V VCC = 13.5 V VCC = 13.5 V VCC = 15 V All Phases 10:1 80 Min. 40 4.3 50 Typ . Max. Un it W dB % VSW ...