3030 Size/ 1.1mm Thickness/ MID* Type Full Color Leadless Chip LED Device
Full Color Leadless Chip LED Device
LT1W92A
LT1W92A(Under Development)
s Outline Dimensions
3.0 4 2.6 3 Colorless tran...
Description
Full Color Leadless Chip LED Device
LT1W92A
LT1W92A(Under Development)
s Outline Dimensions
3.0 4 2.6 3 Colorless transparency 0.4 3.0 2.6 1.1
3030 Size, 1.1mm Thickness, MID* Type Full Color Leadless Chip LED Device
s Radiation Diagram
(Ta=25˚C)
(Unit : mm)
-20˚ Red
Relative luminous intensity(%)
0˚ 100 80 60 40 20
+20˚ +40˚ Yellow-green
-40˚
Black print 1 2 0.7 Recommended PWB pattern for soldering 0.5 0.5 1.2 0.5 1.2 1.2 Soldering area Device center
-60˚
+60˚
-80˚
+80˚
0.4 0.5 1.2
[Anode] X -20˚
Relative luminous intensity(%)
[Cathode] 0˚ 100 80 60 40 20 +60˚ Blue +20˚ +40˚
(0.9)
1.2
(0.9) 1.Plating area Resist 2.Pin connections 4 3 1 Anode(Blue) 2 Anode(Yellow-green) 3 Cathode 4 Anode(Red) 1 2
-40˚
Black print
(0.9)
-60˚
-80˚
+80˚
3.Unspecified tolerance:±0.2
*MID:Molded Interconnection Device
X
s Absolute Maximum Ratings
Model No. Radiation color Radiation material Power dissipation Forward current Peak forward current P*1 IF IFM*2 (mW) (mA) (mA)
( Derating factor Reverse voltage Operating temperature Storage temperature Soldering temperature (mA/˚C) VR Topr Tstg Tsol*3 (V) (˚C) (˚C) (˚C) DC Pulse 260 260 260
)
Blue -30 to +85 -40 to +100 GaN on SiC 200 30 100 0.67 1.33 5 -30 to +85 -40 to +100 LT1W92A Yellow-green GaP 84 30 50 0.40 0.67 5 -30 to +85 -40 to +100 Red GaAsP on GaP 84 30 50 0.40 0.67 5 *1 The value is specified under the condition that either color is lightened separately. When all diodes are lightened simultaneously, the powe...
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