BUZ900DP MOSFET Datasheet

BUZ900DP Datasheet, PDF, Equivalent


Part Number

BUZ900DP

Description

(BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET

Manufacture

ETC

Total Page 3 Pages
Datasheet
Download BUZ900DP Datasheet


BUZ900DP
MAGNA
TEC
MECHANICAL DATA
Dimensions in mm
3.3 Dia.
20.0
BUZ900DP
BUZ901DP
N–CHANNEL
POWER MOSFET
5.0
POWER MOSFETS FOR
AUDIO APPLICATIONS
123
2.0
3.4
1.0
2.0
1.2
5.45 5.45
TO–3PBL
Pin 1 – Gate
Pin 2 – Source
Case is Source
0.6
2.8
Pin 3 – Drain
FEATURES
• HIGH SPEED SWITCHING
• N–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• P–CHANNEL ALSO AVAILABLE AS
BUZ905DP & BUZ906DP
• DOUBLE DIE PACKAGE FOR MAXIMUM
POWER AND HEATSINK SPACE
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
VDSX
Drain – Source Voltage
VGSS
Gate – Source Voltage
ID Continuous Drain Current
ID(PK)
Body Drain Diode
PD
Total Power Dissipation
@ Tcase = 25°C
Tstg Storage Temperature Range
Tj Maximum Operating Junction Temperature
RθJC
Thermal Resistance Junction – Case
BUZ900DP
160V
BUZ901DP
200V
±14V
16A
16A
250W
–55 to 150°C
150°C
0.5°C/W
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 2/95

BUZ900DP
MAGNA
TEC
BUZ900DP
BUZ901DP
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Characteristic
Test Conditions
BVDSX
BVGSS
VGS(OFF)
VDS(SAT)*
Drain – Source Breakdown Voltage VGS = –10V
ID = 10mA
Gate – Source Breakdown Voltage VDS = 0
Gate – Source Cut–Off Voltage
VDS = 10V
Drain – Source Saturation Voltage VGD = 0
IDSX
Drain – Source Cut–Off Current
VGS = –10V
BUZ900DP
BUZ901DP
IG = ±100µA
ID = 100mA
ID = 16A
VDS = 160V
BUZ900DP
VDS = 200V
BUZ901DP
yfs* Forward Transfer Admittance VDS = 10V ID = 3A
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Characteristic
Test Conditions
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 10V
f = 1MHz
ton Turn–on Time
VDS = 20V
toff Turn-off Time
ID = 7A
* Pulse Test: Pulse Width = 300µs , Duty Cycle 2%.
Min.
160
200
±14
0.1
1.4
Typ.
Max. Unit
V
V
1.5 V
12 V
10
mA
10
4S
Min.
Typ.
950
550
18
160
80
Max. Unit
pF
ns
300
250
200
150
100
50
0
0
Derating Chart
25 50 75 100 125 150
TC — CASE TEMPERATURE (˚C)
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 2/95


Features MAGNA TEC 20.0 5.0 BUZ900DP BUZ901DP MECHANICAL DATA Dimensions in mm 3.3 Di a. N–CHANNEL POWER MOSFET POWER MOS FETS FOR AUDIO APPLICATIONS FEATURES 1 2.0 2 3 2.0 1.0 • HIGH SPEED SWIT CHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY R ATING 1.2 0.6 2.8 3.4 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE AS BUZ905DP & BUZ906DP • DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE 5.45 5.45 TO–3PBL Pin 1 – Gate Pin 2 Source Case is Source Pin 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C unless otherwise stated) VDSX Drain – Source Voltage VGSS ID ID(PK) PD Ts tg Tj RθJC Gate – Source Voltage Con tinuous Drain Current Body Drain Diode Total Power Dissipation Storage Tempera ture Range Maximum Operating Junction T emperature Thermal Resistance Junction – Case @ Tcase = 25°C BUZ900DP 160V 16A 16A 250W –55 to 150°C 150°C 0.5°C/W BUZ901DP 200V ±14V Magnatec. Telephone (01455) 554711. Telex:.
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