B1148

Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1752 and 2SD1752A 7.0±0.3 3.0±0.2 Unit: mm 3.5±0.2 7.2±0.3 0.8±0.2 s Features q Low collector to emitter saturation voltage VCE(sat) q High-speed switching q I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to 2SB1148 base voltage 2SB1148A VCBO –40 –50 V Collector to 2SB1148 emitter voltage 2SB1148A VCEO –20 –40 V Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature VEBO ICP IC PC Tj Tstg –7 –20 –10 15 1.3 150 –55 to +150 V A A W ˚C ˚C s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions Collector cutoff 2SB1148 current 2SB1148A Emitter cutoff current Collector to emitter 2SB1148 voltage 2SB1148A ICBO IEBO VCEO VCB = –40V, IE = 0 VCB = –50V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time hFE1 hFE2* VCE(sat) VBE(sat) fT Cob ton tstg tf VCE = –2V, IC = – 0.1A VCE = –2V, IC = –3A IC = –10A, IB = – 0.33A IC = –10A, IB = – 0.33A VCE = –10V, IC = – 0.5A, f = 10MHz VCB = –10V...