H8NB90FI STH8NB90FI Datasheet

H8NB90FI Datasheet, PDF, Equivalent


Part Number

H8NB90FI

Description

STH8NB90FI

Manufacture

ST Microelectronics

Total Page 9 Pages
Datasheet
Download H8NB90FI Datasheet


H8NB90FI
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STW8NB90
STH8NB90FI
N-CHANNEL 900V - 1.1 - 8 A TO-247/ISOWATT218
PowerMesh™ MOSFET
TYPE
VDSS
RDS(on)
ID
STW8NB90
900 V < 1.45
8A
STH8NB90FI
900 V < 1.45
5A
s TYPICAL RDS(on) = 1.1
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)ISD 8 A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
July 2001
3
2
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
Value
STW8NB90 STH8NB90FI
900
900
±30
85
53
32 20
200 80
1.6 0.64
4
- 2500
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
1/9

H8NB90FI
www.DataSheet4U.com
STW8NB90 - STH8NB90FI
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-247
0.625
ISOWATT218
1.56
30
300
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
8
700
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
900
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4 A
Min.
3
Typ.
4
1.1
Max.
5
1.45
Unit
V
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 4 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
8
2120
225
23
Max.
Unit
S
pF
pF
pF
2/9


Features www.DataSheet4U.com N-CHANNEL 900V - 1. 1 Ω - 8 A TO-247/ISOWATT218 PowerMesh ™ MOSFET TYPE STW8NB90 STH8NB90FI s s s s s STW8NB90 STH8NB90FI VDSS 900 V 900 V RDS(on) < 1.45 Ω < 1.45 Ω ID 8A 5A TYPICAL RDS(on) = 1.1 Ω EXT REMELY HIGH dv/dt CAPABILITY 100% AVALA NCHE TESTED VERY LOW INTRINSIC CAPACITA NCES GATE CHARGE MINIMIZED TO-247 3 2 1 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an adva nced family of power MOSFETs with outst anding performances. The new patent pen ding strip layout coupled with the Comp any’s proprieraty edge termination st ructure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt c apabilities and unrivalled gate charge and switching characteristics. APPLICAT IONS s HIGH CURRENT, HIGH SPEED SWITCHI NG s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VD GR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter Drain-source Volta.
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