76132P HUF76132P Datasheet

76132P Datasheet, PDF, Equivalent


Part Number

76132P

Description

HUF76132P

Manufacture

ETC

Total Page 10 Pages
Datasheet
Download 76132P Datasheet


76132P
Data Sheet
HUF76132P3, HUF76132S3S
September 1999 File Number 4553.4
75A, 30V, 0.011 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76132.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76132P3
TO-220AB
76132P
HUF76132S3S
TO-263AB
76132S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF76132S3ST.
Packaging
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
Features
• Logic Level Gate Drive
• 75A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.011
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
6-130
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

76132P
HUF76132P3, HUF76132S3S
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
(TC
(TC
=
=
2150o0CoC, ,VVGGSS==105VV))
(Figure 2)
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.ID
.ID
Continuous (TC = 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . .
Derate Above 25oC
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PD
..
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
30
30
±16
75
44
41
Figure 4
Figures 6, 17, 18
120
0.97
-40 to 150
300
260
UNITS
V
V
V
A
A
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 12)
VDS = 25V, VGS = 0V
VDS = 25V, VGS = 0V, TC = 150oC
VGS = ±16V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 11)
ID = 75A, VGS = 10V (Figure 9, 10)
ID = 44A, VGS = 5V (Figure 9)
ID = 41A, VGS = 4.5V (Figure 9)
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SWITCHING SPECIFICATIONS (VGS = 4.5V)
RθJC
RθJA
(Figure 3)
TO-220, TO-262 and TO-263
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
tON
td(ON)
tr
td(OFF)
tf
tOFF
VDD = 15V, ID 41A,
RL = 0.366, VGS = 4.5V,
RGS = 6.2
(Figures 15, 21, 22)
MIN TYP MAX UNITS
30 -
-V
- - 1 µA
- - 250 µA
- - ±100 nA
1 - 3V
- 0.0085 0.011
-
0.013 0.016
-
0.015 0.018
- - 1.03 oC/W
- - 62 oC/W
- - 185 ns
- 17 - ns
- 105 -
ns
- 33 - ns
- 42 - ns
- - 113 ns
6-131


Features Data Sheet HUF76132P3, HUF76132S3S Sept ember 1999 File Number 4553.4 75A, 30V , 0.011 Ohm, N-Channel, Logic Level Ult raFET Power MOSFETs These N-Channel pow er MOSFETs are manufactured using the i nnovative UltraFET™ process. This adv anced process technology achieves the l owest possible on-resistance per silico n area, resulting in outstanding perfor mance. This device is capable of withst anding high energy in the avalanche mod e and the diode exhibits very low rever se recovery time and stored charge. It was designed for use in applications wh ere power efficiency is important, suc h as switching regulators, switching co nverters, motor drivers, relay drivers, lowvoltage bus switches, and power man agement in portable and battery-operate d products. Formerly developmental type TA76132. Ordering Information PART N UMBER PACKAGE BRAND HUF76132P3 TO-2 20AB 76132P HUF76132S3S TO-263AB 76 132S NOTE: When ordering, use the enti re part number. Add the suffix T to obtain the TO-263AB variant in .
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