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MRF18030ALR3 Dataheets PDF



Part Number MRF18030ALR3
Manufacturers Motorola
Logo Motorola
Description RF Power Field Effect Transistors
Datasheet MRF18030ALR3 DatasheetMRF18030ALR3 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF18030A/D The RF MOSFET Line RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3 Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805 - 1880 MHz. • Typical GSM Performance: Power Gain - 14 dB (Typ) @ 30 Watts Efficien.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF18030A/D The RF MOSFET Line RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3 Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805 - 1880 MHz. • Typical GSM Performance: Power Gain - 14 dB (Typ) @ 30 Watts Efficiency - 50% (Typ) @ 30 Watts • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W Output Power • Excellent Thermal Stability • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. 1.8 - 1.88 GHz, 30 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 MRF18030ALR3 Freescale Semiconductor, Inc... CASE 465F - 04, STYLE 1 NI - 400S MRF18030ALSR3 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 - 0.5, +15 83.3 0.48 - 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 2.1 Unit °C/W ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Rev. 6 MOTOROLA RF DEVICE DATA  Motorola, Inc. 2004 For More Information On This Product, Go to: www.freescale.com MRF18030ALR3 MRF18030ALSR3 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C, 50 ohm system unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 µAdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(th) VGS(Q) VDS(on) gfs 2 2 — — 3 3.9 0.29 2 4 4.5 0.4 — Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 — — — — — — 1 1 Vdc µAdc µAdc Symbol Min Typ Max Unit Freescale Semiconductor, Inc... Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture) (2) Output Power, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) Common - Source Amplifier Power Gain @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) Drain Efficiency @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) Input Return Loss @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) Output Mismatch Stress @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f1 = 1805 - 1880 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. (2) Device specifications obtained on a Production Test Fixture. Crss — 1.3 — pF P1dB Gps η IRL Ψ 27 13 46.5 — 30 14 50 - 12 — — — -9 Watts dB % dB No Degradation In Output Power Before and After Test MRF18030ALR3 MRF18030ALSR3 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. VDD C8 VGG R2 Z9 R3 C7 R1 C4 Z4 RF INPUT Z1 C1 Z2 C2 C9 Z3 DUT C5 Z5 Z6 C3 Z7 C6 Z8 RF OUTPUT + C10 Freescale Semiconductor, Inc... C1 C2 C3 C4, C5 C6, C7, C8 C9 C10 R1 R2, R3 1.8 pF, 100B Chip Capacitor 0.8 pF, 100B Chip Capacitor 1.0 pF, 100B Chip Capacitor 1.2 pF, 100B Chip Capacitors 8.2 pF, 100B Chip Capacitors 0.3 pF, 100B Chip Capacitor 220 mF, 63 V Electrolytic Capacitor 1.0 kΩ, 1/8 W Chip Resistor (0805) 10 kΩ, 1/8 W Chip Resistors (0805) Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.874″ x 0.087″ Microstrip 1.094″ x 0.087″ Microstrip 0.257″ x 0.633″ Microstrip 0.189″ x 0.394″ Microstrip 0.335″ x 0.394″ Microstrip 0.484″ x 0.087″ Microstrip 0.877″ x 0.087″ Microstrip 0.366″ x 0.087″ Microstrip ≈0.600″ x 0.087″ Microstrip Figure 1. 1805 - 1880 MHz Test Fixture Schematic VBIAS R2R3 C7 C1 C9 C5 C2 C3 C8 C4 C6 C10 VSUPPLY R1 MRF18030A Ground (bias) Ground (supply) Figure 2. 1805 - 1880 MHz Test Fixture Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF18030ALR3 MRF18030ALSR3 3 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 16 15 G ps , POWER GAIN (dB) 14 13 IRL @ 30 W 12 IRL @ 15 W 11 10 1750 VDD = 26 Vdc IDQ = 250 mA T = 25_C 1800 1850 f, FREQUENCY (MHz) 1900 −25 −30 1950 −20 Gps @ 15 W Gps @ 3.


ICL7665 MRF18030ALR3 MRF18030ALSR3


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