MRF186

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF186/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 28 volt base station equipment. Guaranteed Performance @ 960 MHz, 28 Volts Output Power — 120 Watts PEP Power Gain — 11 dB Efficiency — 30% Intermodulation Distortion — –28 dBc Excellent Thermal Stability 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 28 Vdc, 960 MHz, 120 Watts CW MRF186 1.0 GHz, 120 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET CASE 375B–04, STYLE 1 NI–860 ARCHIVED 2005 MAXIMUM RATINGS (2) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1 MΩ) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 70°C Derate above 70°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ±20 14 162.5 1.25 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS (2) Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.8 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should...