MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF182/D
The RF MOSFET Line
RF Power Field Effect Trans...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF182/D
The RF MOSFET Line
RF Power Field Effect
Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
High Gain, Rugged Device Broadband Performance from HF to 1 GHz Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances
D
MRF182 MRF182S
30 W, 1.0 GHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs
G
CASE 360B–01, STYLE 1 (MRF182)
S CASE 360C–03, STYLE 1 (MRF182S)
MAXIMUM RATINGS
Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 70°C Derate above 70°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 ± 20 74 0.57 – 65 to +150 200 Unit Vdc Vdc W W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.75 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 1.0 mAdc) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) Gate–Source Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 65 – – – – – – 1 1 Vdc µAdc µAdc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 5
RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997
MRF182 1
ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted)
Characteristic Symbol...