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MRF18090AS Dataheets PDF



Part Number MRF18090AS
Manufacturers Motorola
Logo Motorola
Description LATERAL N-CHANNEL RF POWER MOSFETS
Datasheet MRF18090AS DatasheetMRF18090AS Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090A/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. • GSM and EDGE Performances, Full Frequency Band Power Gain — 13.5 dB (Typ) @ 90 Watts (CW) Efficie.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090A/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. • GSM and EDGE Performances, Full Frequency Band Power Gain — 13.5 dB (Typ) @ 90 Watts (CW) Efficiency — 52% (Typ) @ 90 Watts (CW) • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters MRF18090A MRF18090AS 1.80 – 1.88 GHz, 90 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETS CASE 465B–03, STYLE 1 (NI–880) (MRF18090A) CASE 465C–02, STYLE 1 (NI–880S) (MRF18090AS) MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 +15, –0.5 250 1.43 –65 to +200 200 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.7 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA RF DEVICE DATA © Motorola, Inc. 2002 MRF18090A MRF18090AS 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Quiescent Voltage (VDS = 26 Vdc, ID = 750 mAdc) Drain–Source On–Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture) Common–Source Amplifier Power Gain @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1805 – 1880 MHz) Drain Efficiency @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1805 – 1880 MHz) Input Return Loss (1) (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 1805 – 1880 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA VSWR = 10:1, All Phase Angles at Frequency of Tests) Gps 12.0 η 47 IRL — Ψ — –10 52 — dB 13.5 — % dB Crss — 4.2 — pF VGS(Q) VDS(on) gfs 2.5 — — 3.7 0.1 7.2 4.5 — — Vdc Vdc S V(BR)DSS IDSS IGSS 65 — — — — — — 10 1 Vdc µAdc µAdc Symbol Min Typ Max Unit No Degradation In Output Power Before and After Test (1) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch consistency. MRF18090A MRF18090AS 2 MOTOROLA RF DEVICE DATA R1 R2 T1 Z8 VDD C6 R3 VGG R5 R4 C4 C1 C2 C3 R6 Z1 Z3 Z4 C7 Z5 Z6 DUT Z7 Z9 C8 Z10 C5 + RF INPUT RF OUTPUT Z2 C1, C3 C2 C4, C5 C6 C7, C8 R1 R2, R3, R6 R4 R5 T1 Z1 1.0 mF Chip Capacitors (0805) 1.0 nF Chip Capacitor (0805) 6.8 pF, 100B Chip Capacitors, ATC 220 mF, 50 V Electrolytic Capacitor 12 pF, 100B Chip Capacitors, ATC 2.2 kW Chip Resistor (0805) 1.0 kW Chip Resistors (0805) 10 kW Chip Resistor (0805) 6.8 kW Chip Resistor (0805) BC847 SOT–23 0.697″ x 0.087″ Microstrip Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 PCB 0.197″ x 0.087″ Microstrip 0.819″ x 0.087″ Microstrip 0.181″ x 0.144″ Microstrip 0.383″ x 1.148″ Microstrip 0.400″ x 1.380″ Microstrip 0.351″ x 0.351″ Microstrip 0.126″ x 0.087″ Microstrip 1.280″ x 0.087″ Microstrip ≈1.275″ x 0.055″ Microstrip Teflon® Glass Figure 1. 1.80 – 1.88 GHz Test Fixture Schematic C6 VBIAS R1 R3 R5 R2 T1 R4 C1 C2 C3 R6 C4 C5 VSUPPLY WB2 WB1 C7 C8 Ground MRF18090A Ground Figure 2. 1.80 – 1.88 GHz Test Fixture Component Layout MOTOROLA RF DEVICE DATA MRF18090A MRF18090AS 3 ÎÎÎ ÎÎÎ ÎÎÎ T1 T1 R3 T2 R4 C1 C2 R1 R2 R6 R5 C3 C5 + VSUPPLY C6 C4 C7 RF INPUT Z1 C8 Z2 C9 Z3 C10 Z4 RF OUTPUT C1, C3 C2 C4 C5 C6, C7 C8, C9, C10 R1 R2, R3 R4 1 mF Chip Capacitors (0805) 0.1 mF Chip Capacitor (0805) 1 nF Chip Capacitor (0805) 220 mF, 50 V Electrolytic Capacitor 8.2 pF, 100A Chip Capacitors 22 pF, 100A Chip Capacitors 10 Ω Chip Resistor (0805) 1 kΩ Chip Resistors (0805) 2.2 kΩ Chip Resistor (0805) R5 10 kΩ Chip Resistor (0603) R6 5 kΩ, SMD Potentiometer T1 LP2951 Micro–8 Voltage Regulator T2 BC847 SOT–23 NPN Transistor Z1 0.210″ x 0.055″ Microstrip Z2 0.419″ x 0.787″ Microstrip Z3 0.836″ x 0.512″ Microstrip Z4 0.164″ x 0.055″ Microstrip Substrate = 0.5 mm Teflon® Glass Figure 3. 1.80 – 1.88 .


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