DatasheetsPDF.com

IRL3716 Dataheets PDF



Part Number IRL3716
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRL3716 DatasheetIRL3716 Datasheet (PDF)

PD - 94403A SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Active Oring Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Symbol VDS VGS ID @ TC ID @ TC I DM PD @TC PD @TC IRL3716 IRL3716S IRL3716L HEXFET® Power MOSFET VDSS 20V RDS(on) max 4.0mΩ ID 180A†.

  IRL3716   IRL3716



Document
PD - 94403A SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Active Oring Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Symbol VDS VGS ID @ TC ID @ TC I DM PD @TC PD @TC IRL3716 IRL3716S IRL3716L HEXFET® Power MOSFET VDSS 20V RDS(on) max 4.0mΩ ID 180A† TO-220AB IRL3716 D2Pak IRL3716S TO-262 IRL3716L Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation ƒ Maximum Power Dissipation ƒ Linear Derating Factor Junction and Storage Temperature Range Max. 20 ± 20 180† 130 720 210 100 1.4 -55 to + 175 Units V V A W W W/°C °C = 25°C = 100°C = 25°C = 100°C TJ , TSTG Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case ‡ Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount) … Typ. ––– 0.50 ––– ––– Max. 0.72 ––– 62 40 Units °C/W Notes  through ‡ are on page 11 www.irf.com 1 10/8/04 IRL3716/3716S/3716L Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.021 ––– V/°C Reference to 25°C, ID = 1mA 3.0 4.0 VGS = 10V, ID = 90A ƒ mΩ 4.0 4.8 VGS = 4.5V, ID = 72A ƒ ––– 3.0 V VDS = VGS, ID = 250µA ––– 20 VDS = 16V, VGS = 0V µA ––– 250 VDS = 16V, VGS = 0V, TJ = 125°C ––– 200 VGS = 16V nA ––– -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss Rg td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– Min. Typ. Max. Units Conditions 100 ––– ––– S VDS = 10V, ID = 72A ––– 53 79 ID = 72A ––– 17 26 nC VDS = 16V ––– 24 35 VGS = 4.5V ––– 50 75 VGS = 0V, V DS = 10V 1.5 18 140 38 36 5090 3440 560 ––– ––– ––– ––– ––– ––– ––– Ω ns VDD = 10V ID = 72A RG = 3.9Ω VGS = 4.5V ƒ VGS = 0V VDS = 10V ƒ = 1.0MHz pF Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 640 72 Units mJ A Diode Characteristics Symbol IS I SM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– 180† ––– 0.93 0.80 180 87 190 85 720 1.3 ––– 280 130 280 130 V ns nC ns nC A VSD trr Q rr trr Q rr Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 72A, VGS = 0V ƒ TJ = 125°C, IS = 72A, VGS = 0V ƒ TJ = 25°C, IF = 72A, VR=20V di/dt = 100A/µs ƒ TJ = 125°C, IF = 72A, VR=20V di/dt = 100A/µs ƒ 2 www.irf.com IRL3716/3716S/3716L 10000 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP 10000 ID, Drain-to-Source Current (A) 1000 ID, Drain-to-Source Current (A) 1000 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP 100 100 2.5V 10 10 2.5V 20µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 1 0.1 1 20µs PULSE WIDTH Tj = 175°C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.00 2.0 I D = 180A ID, Drain-to-Source Current (Α ) T J = 25°C T J = 175°C RDS(on) , Drain-to-Source On Resistance 1.5 100.00 (Normalized) 1.0 0.5 10.00 2.0 3.0 4.0 VDS = 15V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL3716/3716S/3716L 100000 VGS = 0V, f = 1 MHZ Ciss = C gs + C gd , C ds SHORTED Crss = C gd Coss = C ds + C gd 10000 VGS , Gate-to-Source Voltage (V) 16 ID = 72A VDS = 16V 12 C, Capacitance(pF) Ciss Coss 8 1000 Crss 4 100 1 10 100 0 0 30 60 90 120 150 VDS , Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 175 ° C 10 °C T J = 25 ID , Drain-to-Source Current (A) 1000 I SD, Reverse Drain Current (A) 100 100µsec 1msec 10 Tc = 25°C Tj.


IRL3803 IRL3716 IRL3716S


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)