Document
PD - 94403A
SMPS MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Active Oring Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC ID @ TC I DM PD @TC PD @TC
IRL3716 IRL3716S IRL3716L
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
4.0mΩ
ID
180A
TO-220AB IRL3716
D2Pak IRL3716S
TO-262 IRL3716L
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
20 ± 20 180 130 720 210 100 1.4 -55 to + 175
Units
V V A W W W/°C °C
= 25°C = 100°C = 25°C = 100°C
TJ , TSTG
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
––– 0.50 ––– –––
Max.
0.72 ––– 62 40
Units
°C/W
Notes through are on page 11
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1
10/8/04
IRL3716/3716S/3716L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.021 ––– V/°C Reference to 25°C, ID = 1mA 3.0 4.0 VGS = 10V, ID = 90A mΩ 4.0 4.8 VGS = 4.5V, ID = 72A ––– 3.0 V VDS = VGS, ID = 250µA ––– 20 VDS = 16V, VGS = 0V µA ––– 250 VDS = 16V, VGS = 0V, TJ = 125°C ––– 200 VGS = 16V nA ––– -200 VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss Rg td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– Min. Typ. Max. Units Conditions 100 ––– ––– S VDS = 10V, ID = 72A ––– 53 79 ID = 72A ––– 17 26 nC VDS = 16V ––– 24 35 VGS = 4.5V ––– 50 75 VGS = 0V, V DS = 10V 1.5 18 140 38 36 5090 3440 560 ––– ––– ––– ––– ––– ––– ––– Ω ns VDD = 10V ID = 72A RG = 3.9Ω VGS = 4.5V VGS = 0V VDS = 10V ƒ = 1.0MHz
pF
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
––– –––
Max.
640 72
Units
mJ A
Diode Characteristics
Symbol
IS
I SM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– 180 ––– 0.93 0.80 180 87 190 85 720 1.3 ––– 280 130 280 130 V ns nC ns nC A
VSD trr Q rr trr Q rr
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 72A, VGS = 0V TJ = 125°C, IS = 72A, VGS = 0V TJ = 25°C, IF = 72A, VR=20V di/dt = 100A/µs TJ = 125°C, IF = 72A, VR=20V di/dt = 100A/µs
2
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IRL3716/3716S/3716L
10000
VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP
10000
ID, Drain-to-Source Current (A)
1000
ID, Drain-to-Source Current (A)
1000
VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP
100
100
2.5V
10
10
2.5V
20µs PULSE WIDTH Tj = 25°C
1 0.1 1 10 100 1 0.1 1
20µs PULSE WIDTH Tj = 175°C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
2.0
I D = 180A
ID, Drain-to-Source Current (Α )
T J = 25°C T J = 175°C
RDS(on) , Drain-to-Source On Resistance
1.5
100.00
(Normalized)
1.0
0.5
10.00 2.0 3.0 4.0
VDS = 15V 20µs PULSE WIDTH
5.0 6.0 7.0 8.0
V GS = 10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature
( ° C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRL3716/3716S/3716L
100000 VGS = 0V, f = 1 MHZ Ciss = C gs + C gd , C ds SHORTED Crss = C gd Coss = C ds + C gd 10000
VGS , Gate-to-Source Voltage (V)
16
ID = 72A VDS = 16V
12
C, Capacitance(pF)
Ciss Coss
8
1000
Crss
4
100 1 10 100
0 0 30 60 90 120 150
VDS , Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100
TJ = 175 ° C
10
°C T J = 25
ID , Drain-to-Source Current (A)
1000
I SD, Reverse Drain Current (A)
100
100µsec
1msec 10 Tc = 25°C Tj.