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IRL3715 Dataheets PDF



Part Number IRL3715
Manufacturers International Rectifier
Logo International Rectifier
Description SMPS MOSFET
Datasheet IRL3715 DatasheetIRL3715 Datasheet (PDF)

PD - 94194A SMPS MOSFET IRL3715 IRL3715S IRL3715L HEXFET® Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l l l VDSS 20V RDS(on) max 14mΩ ID 54A† Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current TO-220AB IRL3715 D2Pak IRL3715S TO-262 IRL3715L Absolute Maximum Ratings Symbol VDS V.

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PD - 94194A SMPS MOSFET IRL3715 IRL3715S IRL3715L HEXFET® Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l l l VDSS 20V RDS(on) max 14mΩ ID 54A† Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current TO-220AB IRL3715 D2Pak IRL3715S TO-262 IRL3715L Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation… Linear Derating Factor Junction and Storage Temperature Range Max. 20 ± 20 54† 38† 210 71 3.8 0.48 -55 to + 175 Units V V A W W W/°C °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount)… Typ. ––– 0.50 ––– ––– Max. 2.1 ––– 62 40 Units °C/W Notes  through † are on page 11 www.irf.com 1 6/5/01 IRL3715/S/L Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.022 11 15 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 14 VGS = 10V, ID = 26A ƒ mΩ 20 VGS = 4.5V, ID = 21A ƒ 3.0 V VDS = VGS, ID = 250µA 20 VDS = 16V, VGS = 0V µA 100 VDS = 16V, VGS = 0V, T J = 125°C 200 VGS = 16V nA -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 26 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 11 3.8 4.4 11 6.4 73 12 5.1 1060 700 120 Max. Units Conditions ––– S VDS = 10V, ID = 21A 17 ID = 21A ––– nC VDS = 10V ––– VGS = 4.5V 17 VGS = 0V, VDS = 10V ––– VDD = 10V ––– ID = 21A ns ––– RG = 1.8 Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 10V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 110 21 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Time Recovery Charge Recovery Time Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.9 0.8 37 28 38 30 54† A 210 1.3 ––– 56 42 57 45 V ns nC ns nC VSD trr Qrr trr Qrr Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 21A, VGS = 0V ƒ TJ = 125°C, IS = 21A, VGS = 0V ƒ TJ = 25°C, IF = 21A, VR=20V di/dt = 100A/µs ƒ TJ = 125°C, IF = 21A, VR=20V di/dt = 100A/µs ƒ 2 www.irf.com IRL3715/S/L 1000 VGS 15V 10V 4.5V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP 1000 I D , Drain-to-Source Current (A) 100 10 2.5V 1 I D , Drain-to-Source Current (A) VGS 15V 10V 4.5V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP 100 10 2.5V 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 20µs PULSE WIDTH TJ = 175 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 ID = 52A R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C 1.5 100 TJ = 175 ° C 1.0 0.5 10 2.0 V DS = 15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL3715/S/L 10000 VGS = 0V, f = 1 MHZ Ciss = C gs + C gd, C ds SHORTED Crss = C gd Coss = C ds + C gd 14 12 ID = 21A VDS = 16V VDS = 10V VGS, Gate-to-Source Voltage (V) C, Capacitance(pF) 1000 Ciss Coss 10 8 6 100 Crss 4 2 0 0 5 10 10 1 10 100 FOR TEST CIRCUIT SEE FIGURE 13 15 20 25 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 TJ = 175 ° C ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) 10 ID , Drain-to-Source Current (A) 100 100µsec 1 TJ = 25 ° C 10 1msec Tc = 25°C Tj = 175°C Single Pulse 1 10 VDS , Drain-toSource Voltage .


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