Document
PD - 94194A
SMPS MOSFET
IRL3715 IRL3715S IRL3715L
HEXFET® Power MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits
l l l
VDSS
20V
RDS(on) max
14mΩ
ID
54A
Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current
TO-220AB IRL3715
D2Pak IRL3715S
TO-262 IRL3715L
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation
Linear Derating Factor Junction and Storage Temperature Range
Max.
20 ± 20 54 38 210 71 3.8 0.48 -55 to + 175
Units
V V A W W W/°C °C
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
––– 0.50 ––– –––
Max.
2.1 ––– 62 40
Units
°C/W
Notes through are on page 11
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1
6/5/01
IRL3715/S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.022 11 15 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 14 VGS = 10V, ID = 26A mΩ 20 VGS = 4.5V, ID = 21A 3.0 V VDS = VGS, ID = 250µA 20 VDS = 16V, VGS = 0V µA 100 VDS = 16V, VGS = 0V, T J = 125°C 200 VGS = 16V nA -200 VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 26 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 11 3.8 4.4 11 6.4 73 12 5.1 1060 700 120 Max. Units Conditions ––– S VDS = 10V, ID = 21A 17 ID = 21A ––– nC VDS = 10V ––– VGS = 4.5V 17 VGS = 0V, VDS = 10V ––– VDD = 10V ––– ID = 21A ns ––– RG = 1.8 Ω ––– VGS = 4.5V ––– VGS = 0V ––– VDS = 10V ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
––– –––
Max.
110 21
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Time Recovery Charge Recovery Time Recovery Charge
Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.9 0.8 37 28 38 30 54 A 210 1.3 ––– 56 42 57 45 V ns nC ns nC
VSD trr Qrr trr Qrr
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 21A, VGS = 0V TJ = 125°C, IS = 21A, VGS = 0V TJ = 25°C, IF = 21A, VR=20V di/dt = 100A/µs TJ = 125°C, IF = 21A, VR=20V di/dt = 100A/µs
2
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IRL3715/S/L
1000
VGS 15V 10V 4.5V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP
1000
I D , Drain-to-Source Current (A)
100
10
2.5V
1
I D , Drain-to-Source Current (A)
VGS 15V 10V 4.5V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP
100
10
2.5V
0.1 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
1 0.1
20µs PULSE WIDTH TJ = 175 °C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
ID = 52A
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.0
TJ = 25 ° C
1.5
100
TJ = 175 ° C
1.0
0.5
10 2.0
V DS = 15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRL3715/S/L
10000 VGS = 0V, f = 1 MHZ Ciss = C gs + C gd, C ds SHORTED Crss = C gd Coss = C ds + C gd
14 12
ID = 21A
VDS = 16V VDS = 10V
VGS, Gate-to-Source Voltage (V)
C, Capacitance(pF)
1000
Ciss Coss
10
8 6
100
Crss
4
2 0 0 5 10
10 1 10 100
FOR TEST CIRCUIT SEE FIGURE 13
15 20 25
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
TJ = 175 ° C
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS (on)
10
ID , Drain-to-Source Current (A)
100 100µsec
1
TJ = 25 ° C
10
1msec Tc = 25°C Tj = 175°C Single Pulse 1 10 VDS , Drain-toSource Voltage .