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IRL3713 Dataheets PDF



Part Number IRL3713
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRL3713 DatasheetIRL3713 Datasheet (PDF)

SMPS MOSFET IRL3713SPbF Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested VDSS 30V HEXFET® Power MOSFET RDS(on) max (mW) ID 3.0@VGS = 10V 260A† Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current l Lead-Free TO-220AB IRL3713PbF D2Pak TO-262 IRL3713SPbF IRL3713LPbF Base Par.

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SMPS MOSFET IRL3713SPbF Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested VDSS 30V HEXFET® Power MOSFET RDS(on) max (mW) ID 3.0@VGS = 10V 260A† Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current l Lead-Free TO-220AB IRL3713PbF D2Pak TO-262 IRL3713SPbF IRL3713LPbF Base Part Number IRL3713PbF IRL3713SLPbF IRL3713SPbF Package Type TO-220 TO-262 D2Pak Standard Pack Form Tube Tube Tube Tape and Reel Left Tape and Reel Right Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @Tc = 100°C Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V c Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation TJ, TSTG Linear Derating Factor Junction and Storage Temperature Range Quantity 50 50 50 800 800 Orderable Part Number IRL3713PbF IRL3713SLPbF IRL3713SPbF IRL3713STRLPbF IRL3713STRRPbF Max 30 ± 20 h 260 h 180 h 1040 330 170 2.2 -55 to +175 Units V V A W W/°C °C Thermal Resistance Symbol RθJC RqCS RθJA RθJA iParameter Junction-to-Case f Case-to-Sink, Flat, Greased Surface fi Junction-to-Ambient gi Junction-to-Ambient (PCB Mount) Typ ––– 0.50 ––– ––– Max 0.45* ––– 62 40 Units °C/W * RθJC (end of life) for D2Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium. Notes  through ‡ are on page 11 1 www.irf.com © 2013 International Rectifier June 21, 2013 IRL3713/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ΔV(BR)DSS/ΔTJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Min Typ 30 ––– ––– 0.027 RDS(on) Static Drain-to-Source On-Resistance ––– 2.6 ––– 3.3 VGS(th) Gate Threshold Voltage 1.0 ––– ––– ––– IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– Gate-to-Source Forward Leakage ––– ––– IGSS Gate-to-Source Reverse Leakage ––– ––– Max ––– ––– 3.0 4.0 2.5 50 20 100 200 -200 Units Conditions V VGS = 0V, ID = 250μA V/°C ee mΩ Reference to 25°C, ID = 1mA VGS = 10V, ID = 38A VGS = 4.5V, ID = 30A V VDS = VGS, ID = 250μA VDS = 30V, VGS = 0V μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min Typ Max Units Conditions gfs Qg Qgs Qgd QOSS RG td(on) tr td(off) tf Ciss Coss Crss Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 76 ––– ––– ––– 75 110 ––– 24 ––– ––– 37 ––– 61 92 0.5 ––– 3.4 ––– 16 ––– ––– 160 ––– ––– 40 ––– ––– 57 ––– ––– 5890 ––– ––– 3130 ––– ––– 630 ––– S VDS = 15V, ID = 30A ID = 30A f nC VDS = 15V VGS = 4.5V VGS = 0V, VDS = 15V Ω VDD = 15V ns ID = 30A e RG = 1.8Ω VGS = 4.5V VGS = 0V pF VDS = 15V ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR d Parameter Single Pulse Avalanche Energy Ù Avalanche Current Typ Max Units ––– 1530 mJ ––– 46 A Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current Ùh (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge Min Typ Max Units Conditions h ––– ––– 260 A MOSFET symbol showing the h ––– ––– 1040 integral reverse ––– 0.80 1.3 ––– 0.68 ––– V p-n junction diode. e TJ = 25°C, IS = 30A, VGS = 0V e TJ = 125°C, IS = 30A, VGS = 0V ––– 75 110 ––– 140 210 e ns TJ = 25°C, IF = 30A, VR = 0V nC di/dt = 100A/μs ––– 78 120 ––– 160 240 e ns TJ = 125°C, IF = 30A, VR = 20V nC di/dt = 100A/μs 2 www.irf.com © 2013 International Rectifier June 21, 2013 IRL3713/S/LPbF I D, Drain-to-Source Current (A) 1000 100 VGS TOP 10V 8.0V 6.0V 4.5V 4.0V 3.3V 2.8V BOTTOM 2.5V 10 1 2.5V 0.1 0.1 20μs PULSE WIDTH TJ = 25 °C 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ID, Drain-to-Source Current (A) 1000 100 VGS TOP 10V 8.0V 6.0V 4.5V 4.0V 3.3V 2.8V BOTTOM 2.5V 10 2.5V 20μs PULSE WIDTH TJ = 175 °C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 1000 2.0 ID = 2.


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