Document
SMPS MOSFET
IRL3713SPbF
Applications
l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
l High Frequency Buck Converters for Computer
Processor Power
l 100% RG Tested
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max (mW) ID
3.0@VGS = 10V
260A
Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage
and Current l Lead-Free
TO-220AB IRL3713PbF
D2Pak
TO-262
IRL3713SPbF IRL3713LPbF
Base Part Number
IRL3713PbF IRL3713SLPbF
IRL3713SPbF
Package Type
TO-220 TO-262
D2Pak
Standard Pack
Form
Tube Tube Tube Tape and Reel Left
Tape and Reel Right
Absolute Maximum Ratings
Symbol VDS VGS
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @Tc = 100°C
Parameter Drain-Source Voltage
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
c Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ, TSTG
Linear Derating Factor Junction and Storage Temperature Range
Quantity
50 50 50 800
800
Orderable Part Number
IRL3713PbF IRL3713SLPbF IRL3713SPbF IRL3713STRLPbF IRL3713STRRPbF
Max 30 ± 20
h 260 h 180 h 1040
330 170
2.2 -55 to +175
Units V V
A
W W/°C
°C
Thermal Resistance
Symbol RθJC RqCS RθJA RθJA
iParameter
Junction-to-Case
f Case-to-Sink, Flat, Greased Surface fi Junction-to-Ambient gi Junction-to-Ambient (PCB Mount)
Typ ––– 0.50 ––– –––
Max 0.45* –––
62 40
Units °C/W
* RθJC (end of life) for D2Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes through are on page 11
1
www.irf.com © 2013 International Rectifier
June 21, 2013
IRL3713/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol V(BR)DSS ΔV(BR)DSS/ΔTJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
Min Typ 30 ––– ––– 0.027
RDS(on)
Static Drain-to-Source On-Resistance
––– 2.6 ––– 3.3
VGS(th)
Gate Threshold Voltage
1.0 –––
––– –––
IDSS
Drain-to-Source Leakage Current
––– –––
––– –––
Gate-to-Source Forward Leakage
––– –––
IGSS
Gate-to-Source Reverse Leakage
––– –––
Max ––– ––– 3.0 4.0 2.5 50 20 100 200 -200
Units
Conditions
V VGS = 0V, ID = 250μA
V/°C
ee mΩ
Reference to 25°C, ID = 1mA VGS = 10V, ID = 38A VGS = 4.5V, ID = 30A
V VDS = VGS, ID = 250μA
VDS = 30V, VGS = 0V
μA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min Typ Max Units
Conditions
gfs Qg Qgs Qgd QOSS RG td(on) tr td(off) tf Ciss Coss Crss
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
76 ––– ––– ––– 75 110 ––– 24 ––– ––– 37 –––
61 92 0.5 ––– 3.4 ––– 16 ––– ––– 160 ––– ––– 40 ––– ––– 57 ––– ––– 5890 ––– ––– 3130 ––– ––– 630 –––
S VDS = 15V, ID = 30A ID = 30A
f nC VDS = 15V VGS = 4.5V VGS = 0V, VDS = 15V Ω
VDD = 15V ns ID = 30A
e RG = 1.8Ω
VGS = 4.5V VGS = 0V pF VDS = 15V ƒ = 1.0MHz
Avalanche Characteristics
Symbol EAS IAR
d Parameter
Single Pulse Avalanche Energy
à Avalanche Current
Typ
Max
Units
–––
1530
mJ
–––
46
A
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ãh (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min Typ Max Units
Conditions
h ––– ––– 260
A MOSFET symbol
showing the
h ––– ––– 1040
integral reverse
––– 0.80 1.3 ––– 0.68 –––
V
p-n junction diode.
e TJ = 25°C, IS = 30A, VGS = 0V e TJ = 125°C, IS = 30A, VGS = 0V
––– 75 110 ––– 140 210
e ns TJ = 25°C, IF = 30A, VR = 0V
nC di/dt = 100A/μs
––– 78 120 ––– 160 240
e ns TJ = 125°C, IF = 30A, VR = 20V
nC di/dt = 100A/μs
2
www.irf.com © 2013 International Rectifier
June 21, 2013
IRL3713/S/LPbF
I D, Drain-to-Source Current (A)
1000 100
VGS
TOP 10V 8.0V
6.0V 4.5V 4.0V
3.3V 2.8V
BOTTOM 2.5V
10
1
2.5V
0.1 0.1
20μs PULSE WIDTH TJ = 25 °C
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID, Drain-to-Source Current (A)
1000 100
VGS TOP 10V
8.0V 6.0V 4.5V 4.0V
3.3V 2.8V BOTTOM 2.5V
10
2.5V
20μs PULSE WIDTH
TJ = 175 °C 1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
2.0 ID = 2.