IRL3713L

PD - 94184D SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested l IRL3713 IRL3713S IRL3713L HEXFET® Power MOSFET RDS(on) max (mW) 3.0@VGS = 10V VDSS 30V ID 260A† Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current TO-220AB IRL3713 D2Pak IRL3713S TO-262 IRL3713L Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @Tc = 100°C TJ, TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max 30 Units V V A c h 180h 1040h 260 330 170 2.2 -55 to +175 ± 20 Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range W W/°C °C Thermal Resistance Symbol RθJC RqCS RθJA RθJA Parameter Junction-to-Case i Typ Max 0.45 ––– 62 40 Units Case-to-Sink, Flat, Greased Surface Junction-to-Ambient fi f ––– 0.50 ––– ––– °C/W Junction-to-Ambient (PCB Mount) gi Notes  through ‡ are on page 11 www.irf.com 1 11/12/03 IRL3713/S/L Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/ ∆TJ RDS(on) VGS(th) IDSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltag...