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STM8401 Dataheets PDF



Part Number STM8401
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description Dual Enhancement Mode Field Effect Transistor
Datasheet STM8401 DatasheetSTM8401 Datasheet (PDF)

S T M8401 S amHop Microelectronics C orp. May.26, 2004 ver1.1 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 30V P R ODUC T S UMMAR Y (P -C hannel) V DS S -30V ID 7A R DS (ON) ( m W ) Max ID -4.5A R DS (ON) ( m W ) Max 25 @ V G S = 10V 40 @ V G S = 4.5V D1 8 55 @ V G S = -10V 85 @ V G S = -4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S o.

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S T M8401 S amHop Microelectronics C orp. May.26, 2004 ver1.1 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 30V P R ODUC T S UMMAR Y (P -C hannel) V DS S -30V ID 7A R DS (ON) ( m W ) Max ID -4.5A R DS (ON) ( m W ) Max 25 @ V G S = 10V 40 @ V G S = 4.5V D1 8 55 @ V G S = -10V 85 @ V G S = -4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG N-C hannel P-C hannel 30 20 7 29 1.7 2.0 -55 to 150 -30 20 - 4.5 -18 -1.7 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 62.5 C /W 1 S T M8401 N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 9A V GS =4.5V, ID= 7A V DS = 10V, V GS = 10V V DS = 10V, ID = 5A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.5 20 35 18 5 848 152 104 2.5 V OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 25 m ohm 40 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance V DS =15V, V GS = 0V f =1.0MH Z S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Q gs Q gd 2 V DD = 15V, ID = 1A, V GS = 10V, R GE N = 6 V DS =15V, ID =9A,V GS =10V V DS =15V, ID =9A,V GS =4.5V V DS =15V, ID = 9A, V GS =10V 22.1 19.3 19 16.6 17.6 8.5 3.7 3.2 ns ns ns ns nC nC nC nC S T M8401 P-Channel ELECTRICAL CHARACTERISTICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS =-10V, ID = -4.5A V GS =-4.5V, ID = -3.6A V DS = -5V, V GS = -10V V DS = -15V, ID = - 4.5A Min Typ C Max Unit -30 -1 V uA 100 nA -1 -1.5 -2.5 45 75 -12 5 591 129 89 V ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 55 m ohm 85 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance V DS =-15V, V GS = 0V f =1.0M.


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