Short Circuit SOA Capability
High Speed IGBT with Diode
IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1
Short Circuit SOA Capability
Preliminary data
...
Description
High Speed IGBT with Diode
IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1
Short Circuit SOA Capability
Preliminary data
VCES IC25 VCE(sat) t fi
TO-247AD (IXSH)
= = = =
600 V 55 A 2.5 V 70 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load, VCL = 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 W, non repetitive TC = 25°C
Maximum Ratings
G
600 600 ±20 ±30 55 30 110 ICM = 60 10 200 -55 ... +150 150 -55 ... +150
V V V V A A A A ms W °C °C °C TO-264 (IXSK)
C
E
TO-268 (D3) (IXST)
C G E
G
C
E C = Collector TAB = Collector
G = Gate E = Emitter
Features International standard packages: JEDEC TO-247, TO-264& TO-268 Short Circuit SOA capability High freqeuncy IGBT and antiparallel FRED in one package New generation HDMOSTM process Applications
Mounting torque
1.13/10 Nm/lb.in. 6 300 g °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C 7 200 3 ±100 IC = IC90 2.5 V V mA mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 750 mA, VGE = 0 V = 2.5 mA, VCE = VGE
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