2SC5577 Transistor Datasheet

2SC5577 Datasheet, PDF, Equivalent


Part Number

2SC5577

Description

NPN Triple Diffused Planar Silicon Transistor

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
Datasheet
Download 2SC5577 Datasheet


2SC5577
Ordering number:ENN6281
NPN Triple Diffused Planar Silicon Transistor
2SC5577
Ultrahigh-Definition Color Display
Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ).
· High breakdown voltage (VCBO=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm
2048B
[2SC5577]
20.0 3.3
5.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector-to-Emitter Sustain Voltage
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
Symbol
Conditions
ICES
VCEO(sus)
IEBO
ICBO
hFE1
hFE2
VCE=1500V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
VCB=800V, IE=0
VCE=5V, IC=1.0A
VCE=5V, IC=12A
2.0
3.4
1.2
1 23
5.45 5.45
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PBL
Ratings
1500
800
6
15
35
3.5
140
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
1.0 mA
800 V
1.0 mA
10 µA
20 30
47
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10700TS (KOTO) TA-2151 No.6281–1/4

2SC5577
2SC5577
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
Fall Time
Symbol
VCE(sat)
VBE(sat)
tstg
tf
IC=12A, IB=3A
IC=12A, IB=3A
IC=8A, IB1=1.6A
IB2=–3.2A
Conditions
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
IB1
IB2
RB
VR
50+
100µF
+
470µF
OUTPUT
RL=25
VBE=–2V
VCC=200V
Ratings
min typ max
Unit
5V
1.5 V
3.0 µs
0.2 µs
IC -- VCE
14
1.2A 1.4A 1.6A 1.8A
2.0A
12
10
1.0A
8 0.8A
0.6A
6 0.4A
4 0.2A
2
0 IB=0
012
3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE – V IT00801
hFE -- IC
7
5 Ta=120°C
VCE=5V
3 25°C
2
--40°C
10
7
5
3
2
1.0
7
7 0.1
2 3 5 7 1.0
2 3 5 7 10
23
Collector Current, IC – A
IT00803
S
16 IC -- VBE
VCE=5V
14
12
10
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE – V IT00802
VCE(sat) -- IC
2
IC / IB=5
10
7
5
3
2
1.0
7
5
3
2 25°C
0.1
7
5
3
7 0.1
Ta=--40°C
120°C
2 3 5 7 1.0
2 3 5 7 10
23
Collector Current, IC – A
IT00804
S
No.6281–2/4


Features Ordering number:ENN6281 NPN Triple Diff used Planar Silicon Transistor 2SC5577 Ultrahigh-Definition Color Display Hor izontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP p rocess). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC55 77] 6.0 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Co llector-to-Emitter Voltage Emitter-to-B ase Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperatur e Symbol VCBO VCEO VEBO IC ICP PC Tj Ts tg Tc=25˚C 5.45 5.45 Conditions 2. 8 1 2 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL Ratings 1500 8 00 6 15 35 3.5 140 150 –55 to +150 U nit V V V A A W W ˚C ˚C Electrical C haracteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cuto.
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