Silicon Transistor. 2SC5578 Datasheet

2SC5578 Transistor. Datasheet pdf. Equivalent


Sanyo Semicon Device 2SC5578
Ordering number:ENN6297
NPN Triple Diffused Planar Silicon Transistor
2SC5578
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
· High speed.
· High breakdown voltage (VCBO=1600V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm
2048B
[2SC5578]
20.0 3.3
5.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector-to-Emitter Sustain Voltage
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
Symbol
Conditions
ICES
VCEO(sus)
IEBO
ICBO
hFE1
hFE2
VCE=1600V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
VCB=800V, IE=0
VCE=5V, IC=1.0A
VCE=5V, IC=11A
2.0
3.4
1.2
1 23
5.45 5.45
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PBL
Ratings
1600
800
6
15
35
3.5
140
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
1.0 mA
800 V
1.0 mA
10 µA
15 30
47
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10700TS (KOTO) TA-2546 No.6297–1/4


2SC5578 Datasheet
Recommendation 2SC5578 Datasheet
Part 2SC5578
Description NPN Triple Diffused Planar Silicon Transistor
Feature 2SC5578; Ordering number:ENN6297 NPN Triple Diffused Planar Silicon Transistor 2SC5578 Ultrahigh-Definition.
Manufacture Sanyo Semicon Device
Datasheet
Download 2SC5578 Datasheet




Sanyo Semicon Device 2SC5578
2SC5578
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
Fall Time
Symbol
Conditions
VCE(sat)
VBE(sat)
tstg
tf
IC=11A, IB=2.75A
IC=11A, IB=2.75A
IC=9A, IB1=1.5A, IB2=–3.75A
IC=9A, IB1=1.5A, IB2=–3.75A
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
IB1
IB2
RB
VR
50+
100µF
+
470µF
OUTPUT
RL=22.2
VBE=–2V
VCC=200V
Ratings
min typ max
Unit
5V
1.5 V
3.0 µs
0.2 µs
IC -- VCE
14
12 1.2A
10 1.0A 1.4A
8
0.8A
6 0.6A
0.4A
4 0.2A
2
0 IB=0
012
3 45 6
78
9 10
Collector-to-Emitter Voltage, VCE – V IT00811
hFE -- IC
100
7 VCE=5V
5
Ta=120°C
3
2 25°C
--40°C
10
7
5
3
2
1.0
0.1
23
5 7 1.0
23
5 7 10
2
Collector Current, IC – A
IT00813
16
VCE=5V
14
IC -- VBE
12
10
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V IT00812
10
7 IC / IB=5
VCE(sat) -- IC
5
3
2
1.0
7
5
3
2
25°C
0.1 Ta=--40°C
7
5 120°C
3
2
0.01
0.1
23
5 7 1.0
23
5 7 10
2
Collector Current, IC – A
IT00814
No.6297–2/4



Sanyo Semicon Device 2SC5578
2SC5578
SW Time -- IC
7 tstg
5
3
2
1.0
7
5 tf
3
2
VCC=200V
0.1 IC / IB1=6
7
5
IB2 / IB1=2.5
R load
7 0.1
2 3 5 7 1.0
2 3 5 7 10
23
Collector Current, IC – A
IT00815
7
5 ICP
3
2 IC
10
7
5
F.B A S O
PC =140W
100µs
3
2
1.0
7
5
3
2
0.1
7
5 Tc=25°C
3 Single pulse
2
2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector-to-Emitter Voltage, VCE – V IT00817
PC -- Ta
5.0
10 SW Time -- IB2
7
VCC=200V
tstg IC=9A
5 IB1=1.5A
3 R load
2
1.0
7
5 tf
3
2
0.1
7
7 --0.1
5
3 ICP
2
10
7
5
3
2
23
5 7 --1.0
23
Base Current, IB2 – A
5 7 --10
IT00816
R.B A S O
L=500µH
IB2=--3A
Tc=25°C
Single pulse
1.0
7
5
3
2
0.1
100
160
23
5 7 1000
23
Collector-to-Emitter Voltage, VCE – V IT00818
PC -- Tc
4.0
3.5
3.0
2.0 No heat sink
140
120
80
40
1.0
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – °C
IT00819
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc – °C
IT00820
No.6297–3/4







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