2SC5578 Transistor Datasheet

2SC5578 Datasheet, PDF, Equivalent


Part Number

2SC5578

Description

NPN Triple Diffused Planar Silicon Transistor

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
Datasheet
Download 2SC5578 Datasheet


2SC5578
Ordering number:ENN6297
NPN Triple Diffused Planar Silicon Transistor
2SC5578
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
· High speed.
· High breakdown voltage (VCBO=1600V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm
2048B
[2SC5578]
20.0 3.3
5.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector-to-Emitter Sustain Voltage
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
Symbol
Conditions
ICES
VCEO(sus)
IEBO
ICBO
hFE1
hFE2
VCE=1600V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
VCB=800V, IE=0
VCE=5V, IC=1.0A
VCE=5V, IC=11A
2.0
3.4
1.2
1 23
5.45 5.45
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PBL
Ratings
1600
800
6
15
35
3.5
140
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
1.0 mA
800 V
1.0 mA
10 µA
15 30
47
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10700TS (KOTO) TA-2546 No.6297–1/4

2SC5578
2SC5578
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
Fall Time
Symbol
Conditions
VCE(sat)
VBE(sat)
tstg
tf
IC=11A, IB=2.75A
IC=11A, IB=2.75A
IC=9A, IB1=1.5A, IB2=–3.75A
IC=9A, IB1=1.5A, IB2=–3.75A
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
IB1
IB2
RB
VR
50+
100µF
+
470µF
OUTPUT
RL=22.2
VBE=–2V
VCC=200V
Ratings
min typ max
Unit
5V
1.5 V
3.0 µs
0.2 µs
IC -- VCE
14
12 1.2A
10 1.0A 1.4A
8
0.8A
6 0.6A
0.4A
4 0.2A
2
0 IB=0
012
3 45 6
78
9 10
Collector-to-Emitter Voltage, VCE – V IT00811
hFE -- IC
100
7 VCE=5V
5
Ta=120°C
3
2 25°C
--40°C
10
7
5
3
2
1.0
0.1
23
5 7 1.0
23
5 7 10
2
Collector Current, IC – A
IT00813
16
VCE=5V
14
IC -- VBE
12
10
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V IT00812
10
7 IC / IB=5
VCE(sat) -- IC
5
3
2
1.0
7
5
3
2
25°C
0.1 Ta=--40°C
7
5 120°C
3
2
0.01
0.1
23
5 7 1.0
23
5 7 10
2
Collector Current, IC – A
IT00814
No.6297–2/4


Features Ordering number:ENN6297 NPN Triple Diff used Planar Silicon Transistor 2SC5578 Ultrahigh-Definition CRT Display Horiz ontal Deflection Output Applications Fe atures · High speed. · High breakdown voltage (VCBO=1600V). · High reliabil ity (Adoption of HVP process). · Adopt ion of MBIT process. Package Dimension s unit:mm 2048B [2SC5578] 6.0 20.0 3. 3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0 .6 1.2 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collec tor-to-Base Voltage Collector-to-Emitte r Voltage Emitter-to-Base Voltage Colle ctor Current Collector Current (Pulse) Collector Dissipation Junction Temperat ure Storage Temperature Symbol VCBO VCE O VEBO IC ICP PC Tj Tstg Tc=25˚C 5.45 5.45 Conditions 2.8 1 2 3 1 : B ase 2 : Collector 3 : Emitter SANYO : T O-3PBL Ratings 1600 800 6 15 35 3.5 14 0 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collec.
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