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SSW224 Dataheets PDF



Part Number SSW224
Manufacturers Stanford Microdevices
Logo Stanford Microdevices
Description DC-6 GHZ HIGH ISOLATION SPDT GAAS MMIC SWITCH
Datasheet SSW224 DatasheetSSW224 Datasheet (PDF)

Product Description Stanford Microdevices’ SSW-224 is a high perfomance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable 8-pin ceramic package. This single-pole, double-throw, reflective switch consumes less than 50uA and operates at -5V and 0V for control bias. Its high isolation and low insertion loss makes it ideal for T/R switching in analog and digital wireless communication systems. The die is fabricated using 0.5 micron FET process with gold meta.

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Product Description Stanford Microdevices’ SSW-224 is a high perfomance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable 8-pin ceramic package. This single-pole, double-throw, reflective switch consumes less than 50uA and operates at -5V and 0V for control bias. Its high isolation and low insertion loss makes it ideal for T/R switching in analog and digital wireless communication systems. The die is fabricated using 0.5 micron FET process with gold metallization and silicon nitride passivation to achieve excellent performance and reliability. SSW-224 Preliminary Preliminary DC-6 GHz High Isolation SPDT GaAs MMIC Switch Isolation vs. Frequency VControl = -5 V -20 -30 -40 Product Features • High Isolation : 40dB at 2GHz, 30dB at 6GHz • Low DC Power Consumption • Broadband Performance - True DC Operation • Low Cost Surface-Mountable Ceramic Package Applications • Analog/Digital Wireless System • Spread Spectrum • GPS dB -50 -60 -70 DC 1 2 3 GHz 4 5 6 Electrical Specifications at Ta = 25C Sy mbol Ins Parameters: Test C onditions: Zo=50ohms Inserti on Loss f = 0.05-2.0GHz f = 2.00-4.0GHz f = 4.05-6.0GHz f = 0.05-2.0GHz f = 2.00-4.0GHz f = 4.00-6.0GHz f = 0.05-2.0GHz f = 2.00-4.0GHz f = 4.00-6.0GHz V = -5V V = -8V V = -5V V = -8V dB m dB m dB m dB m uA nsec U nits dB dB dB dB dB dB 37 30 27 Min. Ty p. 0.7 1.1 1.5 47 40 35 1.15 1.25 1.50 +26 +29 +45 +48 40 3 Max. 1.1 1.5 Isol Isolati on VSWR on Input & Output VSWR (on or low loss state) Output Power at 1dB C ompressi on f= 0.5-6.0GHz Thi rd Order Intercept Poi nt f= 0.5-6.0GHz D evi ce C urrent Swi tchi ng Speed 50% control to 10%/90%RF P 1dB TOIP Id Isw The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101423 Rev A Preliminary Preliminary SSW-224 DC-6.0 GHz GaAs MMIC Switches Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. R F In p u t P o w e r C o ntro l Vo lta g e O p e r a t i n g Te m p e r a t u r e S t o r a g e Te m p e r a t u r e The rma l Re s i s ta nc e 2 W M a x>5 0 0 M Hz -10V -4 5 C to +8 5 C -6 5 C to +1 5 0 C 2 0 d e g C /W 0 .0 Insertion Loss vs. Frequency VControl = -5 V -0 .5 dB -1 .0 -1 .5 -2 .0 DC 1 2 3 GHz 4 5 6 2 .0 1 .8 1 .6 dB On Port Input/Output VSWR vs. Frequency VControl = -5 V 1 .4 1 .2 1 .0 DC 1 2 3 GHz 4 5 6 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101423 Rev A Preliminary Preliminary SSW-224 DC-6.0 GHz GaAs MMIC Switches Part Number Ordering Information Caution ESD Sensitive: Appropriate precautions in handling, packaging and testing devices must be observed. Part N umber SSW-224 D ev ices Per R eel 500 R eel Siz e 7" Truth Table Switch Schematic V1 V2 -5 0 J1-J2 Low Loss Is o l a t i o n J1-J3 Is o l a t i o n Low Loss J2 J1 J3 0 -5 Part Symbolization The part will be symbolized with a “W2” designator on the top surface of the package. Package Dimensions .096 [2.44] .050 [1.27] .010 [.25] 60° .015 [.38] .020 [.51] (8X) .065 [1.65] (8X) .030 [.76] TYP(8X) .010 [.25] REF .065 [1.65] REF 7° MAX. TYP .160 [4.06] Pin Out P in 1 2 3 4 5 6 7 8 F u n c tio n GND J1 GND GND J2 V1 V2 J3 D e s c rip tio n Gro und RF i n Gro und Gro und RF o ut 1 C o ntro l 1 C o ntro l 2 RF o ut 2 .010 [.25] DOT MARK DENOTES PIN 1 LOCATION W2 .200 [5.08] .290 [7.37] .140 [3.56] REF HEATSINK PLATE 45° MAX. TYP(8X) .008 [.20] (8X) .036 [.91] .180 [4.57] SEATING PLANE TO BE ±.002 FROM HEATSINK PLATE BOTTOM. .010 [.25] R.010 [.25] TYP (4X) .140 [3.56] .020 [.51] .160 [4.06] REF .035 [.89] TYP (4X) HEATSINK PLATE .200 [5.08] REF DIMENSIONS ARE IN INCHES [MM] 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101423 Rev A .


SSW-224 SSW224 7085NS


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