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HM5165805F

Hitachi Semiconductor

(HM5164805F / HM5165805F) 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh

HM5164805F Series HM5165805F Series 64 M EDO DRAM (8-Mword × 8-bit) 8 k Refresh/4 k Refresh ADE-203-1057B (Z) Rev. 2.0 ...


Hitachi Semiconductor

HM5165805F

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Description
HM5164805F Series HM5165805F Series 64 M EDO DRAM (8-Mword × 8-bit) 8 k Refresh/4 k Refresh ADE-203-1057B (Z) Rev. 2.0 Nov. 30, 1999 Description The Hitachi HM5164805F Series, HM5165805F Series are 64M-bit dynamic RAMs organized as 8,388,608-word × 8-bit. They have realized high performance and low power by employing CMOS process technology. HM5164805F Series, HM5165805F Series offer Extended Data Out (EDO) Page Mode as a high speed access mode. They have the package variation of standard 32-pin plastic SOJ and standard 32pin plastic TSOPII. Features Single 3.3 V supply: 3.3 V ± 0.3 V Access time: 50 ns/60 ns (max) Power dissipation  Active: 414 mW/378 mW (max) (HM5164805F Series) : 486 mW/414 mW (max) (HM5165805F Series)  Standby : 1.8 mW (max) (CMOS interface) : 1.1 mW (max) (L-version) EDO page mode capability Refresh cycles  RAS-only refresh 8192 cycles /64 ms (HM5164805F, HM5164805FL) 4096 cycles /64 ms (HM5165805F, HM5165805FL)  CBR/Hidden refresh 4096 cycles /64 ms (HM5164805F, HM5164805FL, HM5165805F, HM5165805FL) HM5164805F Series, HM5165805F Series 4 variations of refresh  RAS-only refresh  CAS-before-RAS refresh  Hidden refresh  Self refresh (L-version) Battery backup operation (L-version) Ordering Information Type No. HM5164805FJ-5 HM5164805FJ-6 HM5164805FLJ-5 HM5164805FLJ-6 HM5165805FJ-5 HM5165805FJ-6 HM5165805FLJ-5 HM5165805FLJ-6 HM5164805FTT-5 HM5164805FTT-6 HM5164805FLTT-5 HM5164805FLTT-6 HM5165805FTT-5 HM5165805FTT-6 HM5165805FLTT-5 ...




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