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HM5165165F

Hitachi Semiconductor

(HM5164165F / HM5165165F) 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh

HM5164165F Series HM5165165F Series 64M EDO DRAM (4-Mword × 16-bit) 8k refresh/4k refresh ADE-203-1058B(Z) Rev. 2.0 Nov...


Hitachi Semiconductor

HM5165165F

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Description
HM5164165F Series HM5165165F Series 64M EDO DRAM (4-Mword × 16-bit) 8k refresh/4k refresh ADE-203-1058B(Z) Rev. 2.0 Nov. 30, 1999 Description The Hitachi HM5164165F Series, HM5165165F Series are 64M-bit dynamic RAMs organized as 4,194,304word × 16-bit. They have realized high performance and low power by employing CMOS process technology. HM5164165F Series, HM5165165F Series offer Extended Data Out (EDO) Page Mode as a high speed access mode. They have the package variations of standard 50-pin plastic SOJ and standerd 50-pin plastic TSOPII Features Single 3.3 V supply: 3.3 V ± 0.3 V Access time: 50 ns/60 ns (max) Power dissipation  Active: 432 mW/396 mW (max) (HM5164165F Series) : 504 mW/432 mW (max) (HM5165165F Series)  Standby : 1.8 mW (max) (CMOS interface) : 1.1 mW (max) (L-version) EDO page mode capability Refresh cycles  RAS-only refresh 8192 cycles /64 ms (HM5164165F, HM5164165FL) 4096 cycles /64 ms (HM5165165F, HM5165165FL)  CBR/Hidden refresh 4096 cycles /64 ms (HM5164165F, HM5164165FL, HM5165165F, HM5165165FL) HM5164165F Series, HM5165165F Series 4 variations of refresh  RAS-only refresh  CAS-before-RAS refresh  Hidden refresh  Self refresh (L-version) 2CAS-byte control Battery backup operation (L-version) Ordering Information Type No. HM5164165FJ-5 HM5164165FJ-6 HM5164165FLJ-5 HM5164165FLJ-6 HM5165165FJ-5 HM5165165FJ-6 HM5165165FLJ-5 HM5165165FLJ-6 HM5164165FTT-5 HM5164165FTT-6 HM5164165FLTT-5 HM5164165FLTT-6 HM5165165FTT-5 HM5165165FTT-...




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