Silicon Transistor. C5088 Datasheet

C5088 Transistor. Datasheet pdf. Equivalent


Part C5088
Description NPN Epitaxial Planar Type Silicon Transistor
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Manufacture ETC
Datasheet
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C5088
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5088
2SC5088
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
Low noise figure, high gain.
NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 20 V
Collector-emitter voltage
VCEO 12 V
Emitter-base voltage
VEBO 3 V
Base current
IB 40 mA
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
IC 80 mA
PC 100 mW
Tj 125 °C
Tstg
55~125
°C
USQ
1.Emitter1
2.Collector
3.Emitter2
4.Base
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
high temperature/current/voltage and the significant change in
JEITA
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2K1A
operating temperature/current/voltage, etc.) are within the
Weight: 0.006 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/
“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
S21e2 (1)
S21e2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA, f = 500 MHz
VCE = 10 V, IC = 20 mA, f = 1 GHz
VCE = 10 V, IC = 5 mA, f = 500 MHz
VCE = 10 V, IC = 5 mA, f = 1 GHz
Min Typ. Max Unit
57
18
9.5 13
1
1.1
GHz
dB
dB
2
1 2007-11-01



C5088
2SC5088
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 10 V, IC = 20 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
Cre
80
1
1
240
1.1 1.6
0.65 1.05
μA
μA
pF
pF
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Marking
43
MCO
Type name
hFE rank
12
2 2007-11-01







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