Document
2SK1388
F-III Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance
N-channel MOS-FET
30V
0,022Ω 35A
60W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters www.DataSheet4U.com
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 30 35 140 35 ±20 60 150 -55 ~ +150 Unit V A A A V W °C °C
> Equivalent Circuit
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t V t
GSS DS(on)
fs iss oss rss d(on) r d(off) f SD rr
Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V Tch=25°C VGS=0V Tch=125°C VGS=±20V VDS=0V ID=17,5A VGS=4V ID=17,5A VGS=10V ID=17,5A VDS=12V VDS=25V VGS=0V f=1MHz VCC=12V ID=35A VGS=10V RGS=25 Ω IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C
Min. 30 1,0
Typ. 1,5 10 0,2 10 0,025 0,016 17 1750 800 400 25 100 300 180 1,35 100
Max. 2,5 500 1,0 100 0,037 0,022 2630 1200 600 38 150 450 270 2,0
8
Unit V V µA mA nA Ω Ω S pF pF pF ns ns ns ns V ns
- Thermal Characteristics Item Thermal Resistance
Symbol R th(ch-a) R th(ch-c)
Test conditions channel to air channel to case
Min.
Typ.
Max. 75 2,08
Unit °C/W °C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
N-channel MOS-FET
30V
0,022Ω 35A
2SK1388
F-III Series
Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics
60W
> Characteristics
Typical Output Characteristics
↑
ID [A]
1
↑
RDS(ON) [Ω]
2
↑
ID [A]
3
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VDS [V]
→
Tch [°C]
→
VGS [V]
→
Typical Drain-Source-On-State-Resistance vs. ID
Typical Forward Transconductance vs. ID
Gate Threshold Voltage vs. Tch
↑
RDS(ON) [Ω]
4
↑
gfs [S]
5
↑
VGS(th) [V]
6
ID [A]
→
ID [A]
→
Tch [°C]
→
Typical Capacitance vs. VDS
Typical Input Charge
Forward Characteristics of Reverse Diode
↑
C [nF]
7
↑
VDS [V]
8
↑
VGS [V]
↑
IF [A]
9
VDS [V]
→
Qg [nC]
→
VSD [V]
→
Allowable Power Dissipation vs. TC
↑
Zth(ch-c) [K/W]
Transient Thermal impedance
↑
PD [W]
10
11
Tc [°C]
→
This specification is subject to change without notice!
t [s]
→
.