2SD2908 Transistor Datasheet

2SD2908 Datasheet, PDF, Equivalent


Part Number

2SD2908

Description

Transistor

Manufacture

Jiangsu Changjiang Electronics

Total Page 1 Pages
Datasheet
Download 2SD2908 Datasheet


2SD2908
omJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
t4U.cSOT-89 Plastic-Encapsulate Transistors
taShee2SD2908 TRANSISTOR (NPN)
.DaFEATURES
wPower dissipation
ww PCM:
0.5 W (Tamb=25)
SOT-89
1. BASE
2. COLLECTOR
1
2
Collector current
ICM: 5 A
mCollector-base voltage
oV(BR)CBO:
50 V
.cOperating and storage junction temperature range
TJ, Tstg: -55to +150
3. EMITTER
3
t4UELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
eParameter
eCollector-base breakdown voltage
hCollector-emitter breakdown voltage
SEmitter-base breakdown voltage
taCollector cut-off current
aEmitter cut-off current
.DDC current gain
Collector-emitter saturation voltage
wTransition frequency
wwCollector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=50µA, IE=0
Ic=1mA, IB=0
IE=50µA, IC=0
VCB=40V, IE=0
VEB=5V, IC=0
VCE=2V, IC=0.5A
IC=4A, IB=100mA
VCE=6V, IC=50mA, f=100MHz
VCB=20V, IE=0, f=1MHz
MIN TYP MAX
50
20
6
0.5
0.5
120 390
1
150
30
UNIT
V
V
V
µA
µA
V
MHz
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
Q
120-270
AHQ
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Features m o .c U Plastic-Encapsulate Transistors SOT-89 4 t e e h S TRANSISTOR (NPN) SO T-89 2SD2908 a t a 1. D FEATURES . w di ssipation Power 2. w 1 P : 0.5 W (Tamb= 25℃) w 2 BASE COLLECTOR CM JIANGSU C HANGJIANG ELECTRONICS TECHNOLOGY CO., L TD Collector current 5 A ICM: Collecto r-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICA L CHARACTERISTICS (Tamb=25℃ Parameter Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO Collector-base breakdown voltage Col lector-emitter breakdown voltage Emitte r-base breakdown voltage Collector cut- off current Emitter cut-off current DC current gain Collector-emitter saturat ion voltage Transition frequency Colle ctor output capacitance m o .c U 4 t e e h S a t a .D w w w 3. EMITTER 3 unle ss otherwise specified) Test conditions MIN TYP Ic=50µA, IE=0 Ic=1mA, IB=0 M AX UNIT V V V 50 20 6 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 0.5 0.5 3 90 1 µA µA IEBO hFE(1) VCE=2V, IC=0.5A 120 VCE(sat) IC=4A, IB=100m.
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