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2SD2908 Datasheet, Equivalent, Transistor.Transistor Transistor |
| Part | 2SD2908 |
|---|---|
| Description | Transistor |
| Feature | m o . c U Plastic-Encapsulate Transistors SOT-89 4 t e e h S TRANSISTOR (NPN) SO T-89 2SD2908 a t a 1. D FEATURES . w di ssipation Power 2. w 1 P : 0. 5 W (Tamb= 25℃) w 2 BASE COLLECTOR CM JIANGSU C HANGJIANG ELECTRONICS TECHNOLOGY CO. , L TD Collector current 5 A ICM: Collecto r-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICA L CHARACTERISTICS (Tamb=25℃ Parameter Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO Collector-base breakdown voltage Col lector-emitter breakdown voltage Emitte r-base breakdown voltage Collector cut- off current Emitter cu . |
| Manufacture | Jiangsu Changjiang Electronics |
| Datasheet |
| Part | 2SD2908 |
|---|---|
| Description | Transistor |
| Feature | m o . c U Plastic-Encapsulate Transistors SOT-89 4 t e e h S TRANSISTOR (NPN) SO T-89 2SD2908 a t a 1. D FEATURES . w di ssipation Power 2. w 1 P : 0. 5 W (Tamb= 25℃) w 2 BASE COLLECTOR CM JIANGSU C HANGJIANG ELECTRONICS TECHNOLOGY CO. , L TD Collector current 5 A ICM: Collecto r-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICA L CHARACTERISTICS (Tamb=25℃ Parameter Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO Collector-base breakdown voltage Col lector-emitter breakdown voltage Emitte r-base breakdown voltage Collector cut- off current Emitter cu . |
| Manufacture | Jiangsu Changjiang Electronics |
| Datasheet |
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