Transistor. 2SD2908 Datasheet

2SD2908 Transistor. Datasheet pdf. Equivalent


Jiangsu Changjiang Electronics 2SD2908
omJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
t4U.cSOT-89 Plastic-Encapsulate Transistors
taShee2SD2908 TRANSISTOR (NPN)
.DaFEATURES
wPower dissipation
ww PCM:
0.5 W (Tamb=25)
SOT-89
1. BASE
2. COLLECTOR
1
2
Collector current
ICM: 5 A
mCollector-base voltage
oV(BR)CBO:
50 V
.cOperating and storage junction temperature range
TJ, Tstg: -55to +150
3. EMITTER
3
t4UELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
eParameter
eCollector-base breakdown voltage
hCollector-emitter breakdown voltage
SEmitter-base breakdown voltage
taCollector cut-off current
aEmitter cut-off current
.DDC current gain
Collector-emitter saturation voltage
wTransition frequency
wwCollector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=50µA, IE=0
Ic=1mA, IB=0
IE=50µA, IC=0
VCB=40V, IE=0
VEB=5V, IC=0
VCE=2V, IC=0.5A
IC=4A, IB=100mA
VCE=6V, IC=50mA, f=100MHz
VCB=20V, IE=0, f=1MHz
MIN TYP MAX
50
20
6
0.5
0.5
120 390
1
150
30
UNIT
V
V
V
µA
µA
V
MHz
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
Q
120-270
AHQ
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2SD2908 Datasheet
Recommendation 2SD2908 Datasheet
Part 2SD2908
Description Transistor
Feature 2SD2908; m o .c U Plastic-Encapsulate Transistors SOT-89 4 t e e h S TRANSISTOR (NPN) SOT-89 2SD2908 a t a 1..
Manufacture Jiangsu Changjiang Electronics
Datasheet
Download 2SD2908 Datasheet








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