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2SK3880 Datasheet, Equivalent, N-Channel MOSFET.Silicon N-Channel MOSFET Silicon N-Channel MOSFET |
　
　
　
| Part | 2SK3880 |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | 2SK3880
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ï€-MOSIV)
2SK3880
Switching Regulator Application s
• • • • Low drain-source ON r esistance: RDS (ON) = 1. 35Ω (typ. ) Hig h forward transfer admittance: |Yfs| = 5. 2 S (typ. ) Low leakage current: IDSS = 100μA (max) (VDS = 640 V) Enhancemen t model: Vth = 2. 0~4. 0 V (VDS = 10 V, I D = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kâ „¦) Gate-source voltage Drain current D C Pulse (Note 1) (Note 1) Symbol VDSS V DGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 800 800 ±30 6. 5 19. 5 . |
| Manufacture | Toshiba |
| Datasheet |
| Part | 2SK3880 |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | 2SK3880
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ï€-MOSIV)
2SK3880
Switching Regulator Application s
• • • • Low drain-source ON r esistance: RDS (ON) = 1. 35Ω (typ. ) Hig h forward transfer admittance: |Yfs| = 5. 2 S (typ. ) Low leakage current: IDSS = 100μA (max) (VDS = 640 V) Enhancemen t model: Vth = 2. 0~4. 0 V (VDS = 10 V, I D = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kâ „¦) Gate-source voltage Drain current D C Pulse (Note 1) (Note 1) Symbol VDSS V DGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 800 800 ±30 6. 5 19. 5 . |
| Manufacture | Toshiba |
| Datasheet |
　
　
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