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2SK3880 Datasheet, Equivalent, Type FET.

Silicon N-Channel MOS Type FET

Silicon N-Channel MOS Type FET

 

 

 

Part 2SK3880
Description Silicon N-Channel MOS Type FET
Feature 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) 2SK3880 Switching Regulator Application s



• Low drain-source ON r esistance: RDS (ON) = 1.
35Ω (typ.
) Hig h forward transfer admittance: |Yfs| = 5.
2 S (typ.
) Low leakage current: IDSS = 100μA (max) (VDS = 640 V) Enhancemen t model: Vth = 2.
0~4.
0 V (VDS = 10 V, I D = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k ) Gate-source voltage Drain current D C Pulse (Note 1) (Note 1) Symbol VDSS V DGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 800 800 ±30 6.
5 19.
5 .
Manufacture Toshiba
Datasheet
Download 2SK3880 Datasheet
Part 2SK3880
Description Silicon N-Channel MOS Type FET
Feature 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) 2SK3880 Switching Regulator Application s



• Low drain-source ON r esistance: RDS (ON) = 1.
35Ω (typ.
) Hig h forward transfer admittance: |Yfs| = 5.
2 S (typ.
) Low leakage current: IDSS = 100μA (max) (VDS = 640 V) Enhancemen t model: Vth = 2.
0~4.
0 V (VDS = 10 V, I D = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k ) Gate-source voltage Drain current D C Pulse (Note 1) (Note 1) Symbol VDSS V DGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 800 800 ±30 6.
5 19.
5 .
Manufacture Toshiba
Datasheet
Download 2SK3880 Datasheet

2SK3880

2SK3880
2SK3880

2SK3880

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