2SK3880 FET Datasheet

2SK3880 Datasheet, PDF, Equivalent


Part Number

2SK3880

Description

Silicon N-Channel MOS Type FET

Manufacture

Toshiba

Total Page 6 Pages
Datasheet
Download 2SK3880 Datasheet


2SK3880
2SK3880
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
2SK3880
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.)
High forward transfer admittance: |Yfs| = 5.2 S (typ.)
Low leakage current: IDSS = 100μA (max) (VDS = 640 V)
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAR
IAR
EAR
Tch
Tstg
Rating
800
800
±30
6.5
19.5
80
375
6.5
8
150
55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
2
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
1.56
41.6
Unit
°C/W
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.1 mH, RG = 25 , IAR = 6.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
1 2005-01-18

2SK3880
2SK3880
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 µA, VDS = 0 V
VDS = 640 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 3.5 A
VDS = 20 V, ID = 3.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Min
±30
800
2.0
2.5
tr VG1S0 V
0V
ton
ID = 3.5 A VOUT
RL= 114
tf
VDD ∼− 400 V
Duty <= 1%, tw = 10 µs
toff
Typ.
1.35
5.2
1500
25
140
Max
±10
100
4.0
1.7
35
80
50
220
Unit
µA
V
µA
V
V
S
pF
ns
Qg 35
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 6.5 A 22 nC
Qgd 13
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 6.5 A, VGS = 0 V
IDR = 6.5 A, VGS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
⎯ ⎯ 6.5 A
19.5
A
⎯ −1.7
V
1200
ns
11.5
µC
Marking
TOSHIBA
K3880
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2005-01-18


Features 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) 2SK3880 Switching Regulator Application s • • • • Low drain-source ON r esistance: RDS (ON) = 1.35Ω (typ.) Hig h forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100μA (max) (VDS = 640 V) Enhancemen t model: Vth = 2.0~4.0 V (VDS = 10 V, I D = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k ) Gate-source voltage Drain current D C Pulse (Note 1) (Note 1) Symbol VDSS V DGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 800 800 ±30 6.5 19.5 80 375 6. 5 8 150 −55~150 Unit V V V A W mJ A m J °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive a valanche energy (Note 3) Channel temper ature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-16F1B 2 Weigh t: 5.8 g (typ.) Thermal Characteristic s Characteristics Thermal resistance, channel to case Thermal resistance, channel to am.
Keywords 2SK3880, datasheet, pdf, Toshiba, Silicon, N-Channel, MOS, Type, FET, SK3880, K3880, 3880, 2SK388, 2SK38, 2SK3, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)