2SK3889-01L,S,SJ om
N-CHANNEL SILICON POWER MOSFET
e Series Super FAP-G e h S Features a High speed at switching Low on...
2SK3889-01L,S,SJ om
N-CHANNEL SILICON POWER MOSFET
e Series Super FAP-G e h S Features a High speed at switching Low on-resistance D breakdown Low driving power No . secondary Avalanche-proof w wApplications w Switching
regulators DC-DC converters
UPS (Uninterruptible Power Supply)
U FUJI POWER MOSFET 4 t
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Outline Drawings (mm) 200406
See to P4
Maximum ratings and characteristic
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR dV DS /dt dV/dt PD Tch Tstg Ratings 600 600 9 ±36 ±30 9 462.3 16.5 20 5 165 1.67 +150 Unit V V A A V A mJ mJ Remarks VGS=-30V
Equivalent circuit schematic
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge
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Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss ...
