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2SK3889-01SJ Dataheets PDF



Part Number 2SK3889-01SJ
Manufacturers Fuji Semiconductors
Logo Fuji Semiconductors
Description Power MOSFET
Datasheet 2SK3889-01SJ Datasheet2SK3889-01SJ Datasheet (PDF)

2SK3889-01L,S,SJ om N-CHANNEL SILICON POWER MOSFET e Series Super FAP-G e h S Features a High speed at switching Low on-resistance D breakdown Low driving power No . secondary Avalanche-proof w wApplications w Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) U FUJI POWER MOSFET 4 t .c Outline Drawings (mm) 200406 See to P4 Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Curre.

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2SK3889-01L,S,SJ om N-CHANNEL SILICON POWER MOSFET e Series Super FAP-G e h S Features a High speed at switching Low on-resistance D breakdown Low driving power No . secondary Avalanche-proof w wApplications w Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) U FUJI POWER MOSFET 4 t .c Outline Drawings (mm) 200406 See to P4 Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR dV DS /dt dV/dt PD Tch Tstg Ratings 600 600 9 ±36 ±30 9 462.3 16.5 20 5 165 1.67 +150 Unit V V A A V A mJ mJ Remarks VGS=-30V Equivalent circuit schematic Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge w w w t a .D Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Symbol Rth(ch-c) Rth(ch-a) S a -55 to +150 kV/µs VDS= < 600V kV/µs Note *4 Tc=25°C W Ta=25°C °C °C e h Note *1 Note *2 Note *3 U 4 t e .c Gate(G) m o Drain(D) Source(S) Note *1:Tch< = 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=3.6A,L=65.4mH, VCC=60V,RG=50Ω EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Thermal impedance’ graph. Note *4:IF< = 150°C = BVDSS,Tch< = -ID, -di/dt=50A/µs,VCC< Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS =600V VGS=0V Tch=125°C VDS =480V VGS=0V VGS=±30V VDS=0V ID=4.5A VGS=10V ID=4.5A VDS=25V VDS =25V VGS=0V f=1MH VCC=300V ID=4.5A VGS=10V RGS=10 Ω V CC=300V ID=9A VGS=10V IF=9A VGS=0V Tch=25°C IF=9A VGS=0V -di/dt=100A/µs Tch=25°C Test Conditions channel to case channel to ambient Min. 600 3.0 Typ. Max. 5.0 25 250 100 1.00 Units V V µA nA Ω S pF 4.5 Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd w w w .D a S a t 0.82 9.0 950 1425 130 195 6.0 9.0 16 24 6.0 9.0 33 50 5.5 8.3 25 38 10 15 8.0 12.0 1.10 1.50 860 7.0 e e h U 4 t m o .c ns nC V ns µC Min. Typ. Max. 0.758 75 Units °C/W °C/W 1 2SK3889-01L,S,SJ Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 200 180 160 20 Typical Output Characteristics ID=f(VDS):80 µ s pulse.


2SK3889-01S 2SK3889-01SJ HY514264B


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