Document
2SK3889-01L,S,SJ om
N-CHANNEL SILICON POWER MOSFET
e Series Super FAP-G e h S Features a High speed at switching Low on-resistance D breakdown Low driving power No . secondary Avalanche-proof w wApplications w Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
U FUJI POWER MOSFET 4 t
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Outline Drawings (mm) 200406
See to P4
Maximum ratings and characteristic
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR dV DS /dt dV/dt PD Tch Tstg Ratings 600 600 9 ±36 ±30 9 462.3 16.5 20 5 165 1.67 +150 Unit V V A A V A mJ mJ Remarks VGS=-30V
Equivalent circuit schematic
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge
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Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Symbol Rth(ch-c) Rth(ch-a)
S a
-55 to +150
kV/µs VDS= < 600V kV/µs Note *4 Tc=25°C W Ta=25°C °C °C
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Note *1 Note *2 Note *3
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Gate(G)
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Drain(D)
Source(S)
Note *1:Tch< = 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=3.6A,L=65.4mH, VCC=60V,RG=50Ω EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Thermal impedance’ graph. Note *4:IF< = 150°C = BVDSS,Tch< = -ID, -di/dt=50A/µs,VCC<
Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS =600V VGS=0V Tch=125°C VDS =480V VGS=0V VGS=±30V VDS=0V ID=4.5A VGS=10V ID=4.5A VDS=25V VDS =25V VGS=0V f=1MH VCC=300V ID=4.5A VGS=10V RGS=10 Ω V CC=300V ID=9A VGS=10V IF=9A VGS=0V Tch=25°C IF=9A VGS=0V -di/dt=100A/µs Tch=25°C Test Conditions channel to case channel to ambient
Min.
600 3.0
Typ.
Max.
5.0 25 250 100 1.00
Units
V V µA nA Ω S pF
4.5
Thermal characteristics
Item Thermal resistance www.fujielectric.co.jp/fdt/scd
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S a t
0.82 9.0 950 1425 130 195 6.0 9.0 16 24 6.0 9.0 33 50 5.5 8.3 25 38 10 15 8.0 12.0 1.10 1.50 860 7.0
e e h
U 4 t
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ns nC
V ns µC
Min.
Typ.
Max.
0.758 75
Units
°C/W °C/W
1
2SK3889-01L,S,SJ
Characteristics
Allowable Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
200 180 160
20
Typical Output Characteristics ID=f(VDS):80 µ s pulse.