K3067

www.DataSheet4U.com 2SK3067 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3067 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : RDS (ON) = 4.2 Ω (typ.) : |Yfs| = 1.7 S (typ.) Unit: mm : IDSS = 100 µA (max) (VDS = 600 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Tc = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 2 5 8 25 93 2 2.5 150 −55~150 Unit V V V A A A W mJ A mJ °C °C Pulse (t = 1 ms) (Note 1) Pulse (t = 100 µs) (Note 1) Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA — SC-67 2-10R1B Weight: 1.9 g (typ.) Electrical Characteristics (Tc = 25°C) Characteristics Thermal reverse, channel to case Thermal reverse, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 5.0 62.5 Unit °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 41 mH, RG = 25 Ω, IAR = 2 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-06-...