Document
PMEG2005AEL
0.5 A ultra low VF MEGA Schottky barrier rectifier in leadless ultra small SOD882 package
Rev. 02 — 27 April 2004 Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection encapsulated in a SOD882 leadless ultra small plastic package.
1.2 Features
s s s s s Forward current: 0.5 A Reverse voltage: 20 V Ultra low forward voltage Leadless ultra small plastic package Power dissipation comparable to SOT23.
1.3 Applications
s s s s s s Ultra high-speed switching Voltage clamping Protection circuits Low voltage rectification High efficiency DC-to-DC conversion Low power consumption applications.
1.4 Quick reference data
Table 1: Symbol IF VR Quick reference data Parameter forward current reverse voltage Value 0.5 20 Unit A V
Philips Semiconductors
PMEG2005AEL
0.5 A ultra low VF MEGA Schottky rectifier
2. Pinning information
Table 2: Pin 1 2 Discrete pinning Description cathode anode
[1]
Simplified outline
Symbol
1 2
sym001
1 Bottom view
2
Top view
001aaa332
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3: Ordering information Package Name PMEG2005AEL Description leadless ultra small plastic package; 2 terminals; body 1.0 × 0.6 × 0.5 mm Version SOD882 Type number
4. Marking
Table 4: Marking Marking code F2 Type number PMEG2005AEL
5. Limiting values
Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VR IF IFRM IFSM Tj Tamb Tstg continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current junction temperature operating ambient temperature storage temperature tp ≤ 1 ms; δ ≤ 0.25 t = 8 ms square wave
[1] [1]
Conditions
Min −65 −65
Max 20 0.5 2.5 3 150 +150 +150
Unit V A A A °C °C °C
9397 750 13201
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 27 April 2004
2 of 8
Philips Semiconductors
PMEG2005AEL
0.5 A ultra low VF MEGA Schottky rectifier
[1]
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request.
6. Thermal characteristics
Table 6: Symbol Rth(j-a)
[1] [2]
Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1] [2]
Value 500
Unit K/W
Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 µm copper strip line. For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request.
7. Characteristics
Table 7: Characteristics Tamb = .