AT42085

w w w .D at h S a t e e 4U . m o c Agilent AT-42085 Up to 6 GHz Data Sheet Features Medium Power Silicon Bipolar Transistor High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz Low Noise Figure: 2.0 dB Typical NFO at 2.0 GHz High Gain-Bandwidth Product: 8.0 GHz Typical fT Description Agilent’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-42085 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 85 Plastic Package w w w .D t a S a e h t e U 4 .c m o Low Cost Plastic Package Lead-free Option Available w w w ...