2SK0065

Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VGDO IDSO IDGO IGSO PD Topr Tstg Ratings 12 −12 2 2 2 20 −10 to +70 −20 to +150 Unit V V mA mA mA mW °C °C 1 2 3 0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.1 15.6±0.5 (0.8) 0.75 max. 7.6 1: Drain 2: Gate 3: Source NS-B1 Package I Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Mutual conductance Symbol IDSS* gm NV Conditions VDS = 4.5V, VGS = 0, RS = 2.2kΩ ± 1% VDS = 4.5V, VGS = 0 RS = 2.2kΩ ± 1%, f = 1kHz VDS = 4.5V, RS = 2.2kΩ ± 1% CG = 10pF, A-curve VDS = 4.5V, RS = 2.2kΩ ± 1% CG = 10pF, eG = 100mV, f = 70Hz VDS = 12V, RS = 2.2kΩ ± 1% CG = 10pF, eG = 100mV, f = 70Hz VDS = 1V, RS = 2.2kΩ ± 1% CG = 10pF, eG = 100mV, f = 70Hz −10 −9.5 −11 min 0.04 300 500 typ max 0.8 Unit mA µS 4 µV dB Noise figure GV1* Voltage gain GV2* GV3* * dB dB IDSS rank classification and GV value Runk IDSS (mA) GV1 (dB) GV2 (dB) ∆| GV1 − GV2 | (dB) P 0.04 to 0.2 > −13 > −12 <3 Q 0.15 to 0.8 > −12 > −11 <3 Note) The part number ...