2SK0065 FET Datasheet

2SK0065 Datasheet, PDF, Equivalent


Part Number

2SK0065

Description

Silicon N-Channel Junction FET

Manufacture

Panasonic Semiconductor

Total Page 3 Pages
Datasheet
Download 2SK0065 Datasheet


2SK0065
Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
I Features
G Diode is connected between gate and source
G Low noise voltage
4.0±0.2
2.0±0.2
unit: mm
0.75 max.
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Drain to Source voltage
Gate to Drain voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
VDSO
VGDO
IDSO
IDGO
IGSO
PD
Topr
Tstg
12
12
2
2
2
20
10 to +70
20 to +150
Unit
V
V
mA
mA
mA
mW
°C
°C
0.45+00..1200
(2.5) (2.5)
123
0.45+00..1200
0.7±0.1
1: Drain
2: Gate
3: Source
NS-B1 Package
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current IDSS*
VDS = 4.5V, VGS = 0, RS = 2.2k± 1% 0.04
0.8 mA
Mutual conductance
Noise figure
Voltage gain
gm
NV
GV1*
GV2*
GV3*
VDS = 4.5V, VGS = 0
RS = 2.2k± 1%, f = 1kHz
VDS = 4.5V, RS = 2.2k± 1%
CG = 10pF, A-curve
VDS = 4.5V, RS = 2.2k± 1%
CG = 10pF, eG = 100mV, f = 70Hz
VDS = 12V, RS = 2.2k± 1%
CG = 10pF, eG = 100mV, f = 70Hz
VDS = 1V, RS = 2.2k± 1%
CG = 10pF, eG = 100mV, f = 70Hz
300
500
10
9.5
11
4
µS
µV
dB
dB
dB
* IDSS rank classification and GV value
Runk
IDSS (mA)
GV1 (dB)
GV2 (dB)
| GV1 GV2 | (dB)
P
0.04 to 0.2
> 13
> 12
<3
Q
0.15 to 0.8
> 12
> 11
<3
Note) The part number in the parenthesis shows conventional part number.
241

2SK0065
Silicon Junction FETs (Small Signal)
PD Ta
24
20
16
12
8
4
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
ID VDS
800
Ta=25˚C
700
600
VGS=0V
500
400 0.1V
300 0.2V
200 0.3V
0.4V
100 0.5V
0.6V
0 0.7V
0 2 4 6 8 10 12
Drain to source voltage VDS (V)
gm VGS
1.2
VDS=4.5V
f=1kHz
Ta=25˚C
1.0
IDSS=0.9mA
0.8
0.6
0.3mA
0.4
0.1mA
0.2
0
1.0 0.8 0.6 0.4 0.2
0
Gate to source voltage VGS (V)
gm ID
1.2
VDS=4.5V
f=1kHz
Ta=25˚C
1.0
IDSS=0.9mA
0.3mA
0.8
0.1mA
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0
Drain current ID (mA)
NF Rg
24
VDS=4.5V
ID=300µA
Ta=25˚C
20
f=100Hz
16
1kHz
12
10kHz
8
4
0
0.1 0.3 1 3 10 30 100
Signal source resistance Rg (k)
NF f
16
VDS=4.5V
14 ID=300µA
Ta=25˚C
12
10
8
Rg=10k
6
4
2
1000k
100k
0
0.01 0.03 0.1 0.3 1 3
Frequency f (KHz)
10
2SK0065
ID VGS
1.2
VDS=4.5V
1.0
0.8
0.6
Ta=25˚C
25˚C
0.4
75˚C
0.2
0
2.0 1.6 1.2 0.8 0.4
0
Gate to source voltage VGS (V)
NF ID
24
VDS=4.5V
Rg=100kW
Ta=25˚C
20
16
f=100Hz
12
1kHz
8
10kHz
4
0
0 0.2 0.4 0.6 0.8 1.0
Drain current ID (mA)
242


Features Silicon Junction FETs (Small Signal) 2S K0065 (2SK65) Silicon N-Channel Junctio n FET For impedance conversion in low f requency For electret capacitor microph one 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 u nit: mm I Features G Diode is connect ed between gate and source G Low noise voltage I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source vol tage Gate to Drain voltage Drain to Sou rce current Drain to Gate current Gate to Source current Allowable power dissi pation Operating ambient temperature St orage temperature Symbol VDSO VGDO IDSO IDGO IGSO PD Topr Tstg Ratings 12 −1 2 2 2 2 20 −10 to +70 −20 to +150 U nit V V mA mA mA mW °C °C 1 2 3 0.45+ 0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0 .10 0.7±0.1 15.6±0.5 (0.8) 0.75 ma x. 7.6 1: Drain 2: Gate 3: Source NS- B1 Package I Electrical Characteristic s (Ta = 25°C) Parameter Drain to Sourc e cut-off current Mutual conductance Sy mbol IDSS* gm NV Conditions VDS = 4.5V, VGS = 0, RS = 2.2kΩ ± 1% VDS = 4.5V, VGS = 0 RS = 2.2kΩ ± 1%, f = 1kHz VDS = 4.5V.
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