2SK0657 FET Datasheet

2SK0657 Datasheet, PDF, Equivalent


Part Number

2SK0657

Description

Silicon N-Channel MOS FET

Manufacture

Panasonic Semiconductor

Total Page 3 Pages
Datasheet
Download 2SK0657 Datasheet


2SK0657
Silicon MOS FETs (Small Signal)
2SK0657 (2SK657)
Silicon N-Channel MOS FET
For switching
I Features
G High-speed switching
G M type package, allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9±0.1
(1.5)
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSO
ID
IDP
PD
Tch
Tstg
Ratings
50
8
±100
±200
400
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
(0.85)
0.55±0.1
0.45±0.05
123
(2.5) (2.5)
Internal Connection
G
1: Source
2: Drain
3: Gate
EIAJ: SC-71
M-A1 Package
D
S
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current IDSS
VDS = 10V, VGS = 0
10 µA
Gate to Source leakage current IGSS
VGS = 8V, VDS = 0
50 µA
Drain to Source breakdown voltage VDSS
ID = 100µA, VGS = 0
50
V
Gate threshold voltage
Vth ID = 100µA, VDS = VGS
1.5
3.5 V
Drain to Source ON-resistance RDS(on) ID = 20mA, VGS = 5V
50
Forward transfer admittance
| Yfs |
ID = 20mA, VDS = 5V, f = 1kHz
20
mS
Input capacitance (Common Source) Ciss
15 pF
Output capacitance (Common Source) Coss
VDS = 5V, VGS = 0, f = 1MHz
6 pF
Reverse transfer capacitance (Common Source) Crss
1.2 pF
Turn-on time
ton* VDD = 5V, VGS = 0 to 5V, RL = 200
10
ns
Turn-off time
toff* VDD = 5V, VGS = 5 to 0V, RL = 200
20
ns
* ton, toff measurement circuit
Vout 200
90%
VGS = 5V
50
VDD = 5V
Vin
Vout
10%
10%
90%
ton toff
Note) The part number in the parenthesis shows conventional part number.
1

2SK0657
Silicon MOS FETs (Small Signal)
PD Ta
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
ID VDS
120
Ta=25˚C
100
VGS=6.0V
5.5V
80
5.0V
60
4.5V
40
4.0V
20 3.5V
3.0V
0 2.5V
0 2 4 6 8 10 12
Drain to source voltage VDS (V)
Ciss, Coss, Crss VDS
12
VGS=0
f=1MHz
Ta=25˚C
10
Ciss
8
6
4
Coss
2
0 Crss
1 3 10 30 100
Drain to source voltage VDS (V)
ID VGS
120
VDS=5V
Ta=25˚C
100
Ta=25˚C
80
25˚C
60 75˚C
40
20
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
VIN IO
100 VO=5V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30
Output current IO (mA)
100
2SK0657
| Yfs | VGS
60
VDS=5V
Ta=25˚C
50
40
30
20
10
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
RDS(on) VGS
120
ID=20mA
100
80
60
Ta=75˚C
40 25˚C
25˚C
20
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
2


Features Silicon MOS FETs (Small Signal) 2SK0657 (2SK657) Silicon N-Channel MOS FET Uni t: mm For switching 6.9±0.1 (0.4) 2. 5±0.1 (1.0) (1.0) 3.5±0.1 2.0±0.2 2. 4±0.2 (1.5) (1.5) I Features 1.0±0 .1 (0.85) 1.25±0.05 0.45±0.05 0.55 ±0.1 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source break down voltage Gate to Source voltage Dra in current Max drain current Allowable power dissipation Channel temperature S torage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 ±100 ±20 0 400 150 −55 to +150 Unit V V mA mA mW °C °C 1 (2.5) 2 (2.5) 3 1: Source 2: Drain 3: Gate EIAJ: SC-71 M-A1 Pack age Internal Connection D G S I Ele ctrical Characteristics (Ta = 25°C) Pa rameter Drain to Source cut-off current Gate to Source leakage current Drain t o Source breakdown voltage Gate thresho ld voltage Drain to Source ON-resistanc e Forward transfer admittance Input cap acitance (Common Source) Output capacit ance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time T.
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