2SK0656 FET Datasheet

2SK0656 Datasheet, PDF, Equivalent


Part Number

2SK0656

Description

Silicon N-Channel MOS FET

Manufacture

Panasonic Semiconductor

Total Page 3 Pages
Datasheet
Download 2SK0656 Datasheet


2SK0656
Silicon MOS FETs (Small Signal)
2SK0656 (2SK656)
Silicon N-Channel MOS FET
For switching
I Features
G High-speed switching
G Small drive current owing to high input inpedance
G High electrostatic breakdown voltage
4.0±0.2
2.0±0.2
unit: mm
0.75 max.
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
VDSS
VGSO
ID
IDP
PD
Tch
Tstg
50
8
100
200
200
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
0.45+–00..1200
(2.5) (2.5)
0.45+–00..1200
0.7±0.1
123
Internal Connection
R1
G
R2
1: Source
2: Drain
3: Gate
NS-B1 Package
D
S
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current IDSS
VDS = 10V, VGS = 0
10 µA
Gate to Source leakage current IGSS
VGS = 8V, VDS = 0
40 80 µA
Drain to Source breakdown voltage VDSS
ID = 100µA, VGS = 0
50
V
Gate threshold voltage
Vth ID = 100µA, VDS = VGS
1.5
3.5 V
Drain to Source ON-resistance RDS(on) ID = 20mA, VGS = 5V
50
Forward transfer admittance
| Yfs |
ID = 20mA, VDS = 5V, f = 1kHz
20 35
mS
High level output voltage
VOH VDD = 5V, VGS = 1V, RL = 200
4.5
V
Low level output voltage
Input resistance
VOL VDD = 5V, VGS = 5V, RL = 200
R1 + R2*1
100
1V
200 k
Input capacitance (Common Source) Ciss
9 pF
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time
ton*2
Turn-off time
toff*2
*1 Resistance ratio R1/R2 = 1/50
*2 Pulse measurement
VDS = 10V, VGS = 0, f = 1MHz
VDD = 5V, VGS = 0 to 5V, RL = 200
VDD = 5V, VGS = 5 to 0V, RL = 200
4.5 pF
1.1 pF
1 µs
1 µs
Note) The part number in the parenthesis shows conventional part number.
285

2SK0656
Silicon MOS FETs (Small Signal)
PD Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
ID VDS
120
Ta=25˚C
100
VGS=6.0V
80
5.5V
5.0V
60
4.5V
40
4.0V
20 3.5V
3.0V
0
0 2 4 6 8 10
Drain to source voltage VDS (V)
| Yfs | VGS
50 VDS=5V
Ta=25˚C
40
30
20
10
0
0 2 4 6 8 10
Gate to source voltage VGS (V)
Ciss, Coss VDS
12
VGS=0
f=1MHz
Ta=25˚C
10
Ciss
8
6
4
Coss
2
0
0.1 0.3 1 3 10 30 100
Drain to source voltage VDS (V)
IO VIN
10 VO=5V
Ta=25˚C
3
1
0.3
0.1
0.03
0.01
0.003
0.001
0
1234
Input voltage VIN (V)
5
1000
300
100
VIN IO
VO=1V
Ta=25˚C
30
10
3
1
0.3
0.1
0.1
0.3 1 3 10 30
Output current IO (mA)
100
2SK0656
ID VGS
120
VDS=5V
100
80
Ta=25˚C
25˚C
60
75˚C
40
20
0
0 2 4 6 8 10
Gate to source voltage VGS (V)
RDS(on) VGS
120
ID=20mA
100
80
60
Ta=75˚C
40
25˚C
25˚C
20
0
0 2 4 6 8 10
Gate to source voltage VGS (V)
286


Features Silicon MOS FETs (Small Signal) 2SK0656 (2SK656) Silicon N-Channel MOS FET For switching 4.0±0.2 2.0±0.2 (0.8) 3.0 0.2 unit: mm I Features I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max dra in current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ra tings 50 8 100 200 200 150 −55 to +15 0 Unit V V mA mA mW °C °C 0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0 .7±0.1 1 15.6±0.5 G High-speed swi tching G Small drive current owing to h igh input inpedance G High electrostati c breakdown voltage 2 3 (0.8) 0.75 max. 7.6 1: Source 2: Drain 3: Gate N S-B1 Package Internal Connection D R1 G R2 S I Electrical Characteristics (T a = 25°C) Parameter Drain to Source cu t-off current Gate to Source leakage cu rrent Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance High level output voltage Low level.
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