2SK0655 FET Datasheet

2SK0655 Datasheet, PDF, Equivalent


Part Number

2SK0655

Description

Silicon N-Channel MOS FET

Manufacture

Panasonic Semiconductor

Total Page 3 Pages
Datasheet
Download 2SK0655 Datasheet


2SK0655
Silicon MOS FETs (Small Signal)
2SK0655 (2SK655)
Silicon N-Channel MOS FET
For switching
I Features
G High-speed switching
G Allowing to supply with the radial taping
4.0±0.2
2.0±0.2
unit: mm
0.75 max.
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
VDS
VGSO
ID
IDP
PD
Tch
Tstg
Ratings
50
8
100
200
200
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
0.45+–00.1.200
(2.5) (2.5)
0.45+–00.1.200
0.7±0.1
123
Internal Connection
G
1: Source
2: Drain
3: Gate
NS-B1 Package
D
S
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current IDSS
VDS = 10V, VGS = 0
10 µA
Gate to Source leakage current IGSS
VGS = 8V, VDS = 0
50 µA
Drain to Source breakdown voltage VDSS
ID = 100µA, VGS = 0
50
V
Gate threshold voltage
Vth ID = 100µA, VDS = VGS
1.5
3.5 V
Drain to Source ON-resistance RDS(on) ID = 20mA, VGS = 5V
50
Forward transfer admittance
| Yfs |
ID = 20mA, VDS = 5V, f = 1kHz
20 35
mS
Input capacitance (Common Source) Ciss
10 15 pF
Output capacitance (Common Source) Coss
VDS = 5V, VGS = 0, f = 1MHz
4 5 pF
Reverse transfer capacitance (Common Source) Crss
0.5 1 pF
Turn-on time
ton* VDD = 5V, VGS = 0 to 5V, RL = 200
10
ns
Turn-off time
toff* VDD = 5V, VGS = 5 to 0V, RL = 200
20
ns
* ton, toff measurement circuit
VGS = 5V
50
Vout 200
VDD = 5V
Vin
Vout
10%
90%
10%
90%
ton toff
Note) The part number in the parenthesis shows conventional part number.
283

2SK0655
Silicon MOS FETs (Small Signal)
PD Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
ID VDS
120
Ta=25˚C
100
VGS=6.0V
5.5V
80
5.0V
60
4.5V
40
4.0V
20 3.5V
3.0V
0 2.5V
0 2 4 6 8 10 12
Drain to source voltage VDS (V)
Ciss, Coss, Crss VDS
12
VGS=0
f=1MHz
Ta=25˚C
10
Ciss
8
6
4
Coss
2
0 Crss
1
3
10 30
100
Drain to source voltage VDS (V)
ID VGS
120
VDS=5V
Ta=25˚C
100
Ta=25˚C
80
25˚C
60 75˚C
40
20
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
VIN IO
100 VO=5V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30
Output current IO (mA)
100
2SK0655
| Yfs | VGS
60
VDS=5V
Ta=25˚C
50
40
30
20
10
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
RDS(on) VGS
120
ID=20mA
100
80
60
Ta=75˚C
40 25˚C
25˚C
20
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
284


Features Silicon MOS FETs (Small Signal) 2SK0655 (2SK655) Silicon N-Channel MOS FET uni t: mm For switching I Features 0.75 ma x. 4.0±0.2 (0.8) 3.0±0.2 2.0±0.2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max dr ain current Allowable power dissipation Channel temperature Storage temperatur e Symbol VDS VGSO ID IDP PD Tch Tstg Ra tings 50 8 100 200 200 150 −55 to +15 0 Unit V V mA mA mW °C °C 0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0 .7±0.1 15.6±0.5 G High-speed switch ing G Allowing to supply with the radia l taping (0.8) 7.6 2 3 1 1: Source 2: Drain 3: Gate NS-B1 Package Interna l Connection D G S I Electrical Char acteristics (Ta = 25°C) Parameter Drai n to Source cut-off current Gate to Sou rce leakage current Drain to Source bre akdown voltage Gate threshold voltage D rain to Source ON-resistance Forward tr ansfer admittance Input capacitance (Co mmon Source) Output capacitance (Common Source) Reverse transfer capacitance (.
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