2SK0615 FET Datasheet

2SK0615 Datasheet, PDF, Equivalent


Part Number

2SK0615

Description

SILICON N-CHANNEL MOS FET

Manufacture

Panasonic Semiconductor

Total Page 4 Pages
Datasheet
Download 2SK0615 Datasheet


2SK0615
Silicon MOS FETs (Small Signal)
2SK0615 (2SK615)
Silicon N-Channel MOS FET
For switching
I Features
G Low ON-resistance
G High-speed switching
G Allowing to be driven directly by CMOS and TTL
G M type package, allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
(1.5)
6.9±0.1
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
VDS
80 V
Gate to Source voltage VGSO 20 V
Drain current
ID ±0.5 A
Max drain current
IDP ±1 A
Allowable power dissipation
PD*
1W
Channel temperature
Tch 150 °C
Storage temperature
Tstg
55 to +150
°C
* PC board: Copper foil of the drain portion should have a area of 1cm2 or
more and the board thickness should be 1.7mm.
(0.85)
0.55±0.1
123
(2.5) (2.5)
0.45±0.05
1: Source
2: Drain
3: Gate
EIAJ: SC-71
M-A1 Package
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Drain to Source ON-resistance
Vth
RDS(on)*1
Forward transfer admittance
| Yfs |
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time
ton*1, 2
Turn-off time
toff*1, 2
*1 Pulse measurement
*2 ton, toff measurement circuit
Vin = 10V
t = 1µS
f = 1MHZ
50
Vout
68
VDD = 30V
Vin
Vout
VDS = 60V, VGS = 0
VGS = 20V, VDS = 0
IDS = 100µA, VGS = 0
ID = 1mA, VDS = VGS
ID = 0.5A, VGS = 10V
ID = 0.2A, VDS = 15V, f = 1kHz
VDS = 10V, VGS = 0, f = 1MHz
10% Vin
90% Vout
ton
10%
90%
toff
min typ max Unit
10 µA
0.1 µA
80 V
1.5 3.5 V
2 4
300 mS
45 pF
30 pF
8 pF
15 ns
20 ns
Note) The part number in the parenthesis shows conventional part number.
1

2SK0615
Silicon MOS FETs (Small Signal)
PD Ta
1.6
Copper foil of the drain portion
1.4
should have a area of 1cm2
or more and the board
thickness should be 1.7mm.
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
ID VDS
1.2
Ta=25˚C
VGS=5.5V
1.0
0.8 5V
0.6 4.5V
0.4 4V
3.5V
0.2
3V
0
0 2 4 6 8 10
Drain to source voltage VDS (V)
| Yfs | VGS
600
VDS=15V
f=1kHz
Ta=25˚C
500
400
300
200
100
0
0123456
Gate to source voltage VGS (V)
Ciss, Coss, Crss VDS
120
VGS=0
f=1MHz
Ta=25˚C
100
80
60
40
Ciss
20
Coss
0 Crss
1 3 10 30 100 300 1000
Drain to source voltage VDS (V)
RDS(on) Ta
6
ID=500mA
5
4
VGS=5V
3
10V
2
1
0
50 25
0
25 50 75
Ambient temperature Ta (˚C)
2SK0615
ID VGS
1.2
VDS=10V
Ta=25˚C
1.0
0.8
0.6
0.4
0.2
0
0 2 4 6 8 10
Gate to source voltage VGS (V)
RDS(on) VGS
6
ID=500mA
5
4
3
Ta=75˚C
2
25˚C
25˚C
1
0
0 4 8 12 16 20
Gate to source voltage VGS (V)
2


Features Silicon MOS FETs (Small Signal) 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm I Features 2.0±0 .2 G Low ON-resistance G High-speed sw itching G Allowing to be driven directl y by CMOS and TTL G M type package, all owing easy automatic and manual inserti on as well as stand-alone fixing to the printed circuit board. 6.9±0.1 (0.4) 2.5±0.1 (1.0) (1.0) 3.5±0.1 2.4±0. 2 (1.5) (1.5) R 0.9 R 0.7 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain curren t Allowable power dissipation Channel t emperature Storage temperature * Symbo l VDS VGSO ID IDP PD * Tch Tstg Rating s 80 20 ±0.5 ±1 1 150 −55 to +150 Unit V V A A W °C °C 1 1.0±0.1 (0. 85) 1.25±0.05 0.45±0.05 0.55±0.1 2 (2.5) 3 (2.5) 1: Source 2: Drain 3 : Gate EIAJ: SC-71 M-A1 Package PC boa rd: Copper foil of the drain portion sh ould have a area of 1cm2 or more and th e board thickness should be 1.7mm. I Electrical Characteristics (Ta = 25°C) Pa.
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