2SK0614 FET Datasheet

2SK0614 Datasheet, PDF, Equivalent


Part Number

2SK0614

Description

Silicon N-Channel MOS FET

Manufacture

Panasonic Semiconductor

Total Page 3 Pages
Datasheet
Download 2SK0614 Datasheet


2SK0614
Silicon MOS FETs (Small Signal)
2SK0614 (2SK614)
Silicon N-Channel MOS FET
For switching
I Features
G Low ON-resistance RDS(on)
G High-speed switching
G Allowing to be driven directly by CMOS and TTL
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
VDS
VGSO
ID
IDP
PD
Tch
Tstg
80
20
±0.5
±1
750
150
55 to +150
Unit
V
V
A
A
mW
°C
°C
5.0±0.2
unit: mm
4.0±0.2
0.7±0.1
0.45+00..115
2.5+00..26
2.5+00..26
0.45+00..115
1 23
1: Source
2: Drain
3: Gate
JEDEC: TO-92
EIAJ: SC-43
TO-92-A1 Package
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Drain to Source ON-resistance
Vth
RDS(on)*1
Forward transfer admittance
| Yfs |
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time
ton*2
Turn-off time
toff*2
*1 Pulse measurement
*2 ton, toff measurement circuit
VDS = 60V, VGS = 0
VGS = 20V, VDS = 0
IDS = 100µA, VGS = 0
ID = 1mA, VDS = VGS
ID = 0.5A, VGS = 10V
ID = 0.2A, VDS = 15V, f = 1kHz
VDS = 10V, VGS = 0, f = 1MHz
Vin = 10V
t = 1µS
f = 1MHZ
50
Vout
68
VDD = 30V
Vin
Vout
10% Vin
90% Vout
ton
10%
90%
toff
min typ max Unit
10 µA
0.1 µA
80 V
1.5 3.5 V
2 4
300 mS
45 pF
30 pF
8 pF
15 ns
20 ns
Note) The part number in the parenthesis shows conventional part number.
277

2SK0614
Silicon MOS FETs (Small Signal)
PD Ta
1200
1000
800
600
400
200
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
ID VDS
1.2
Ta=25˚C
VGS=5.5V
1.0
0.8 5V
0.6 4.5V
0.4 4V
3.5V
0.2
3V
0
0 2 4 6 8 10
Drain to source voltage VDS (V)
| Yfs | VGS
600
VDS=15V
f=1kHz
Ta=25˚C
500
400
300
200
100
0
0123456
Gate to source voltage VGS (V)
Ciss, Coss, Crss VDS
120
VGS=0
f=1MHz
Ta=25˚C
100
80
60
40
Ciss
20
Coss
0 Crss
1 3 10 30 100 300 1000
Drain to source voltage VDS (V)
RDS(on) Ta
6
ID=500mA
5
4
VGS=5V
3
10V
2
1
0
50 25
0
25 50 75
Ambient temperature Ta (˚C)
2SK0614
ID VGS
1.2
VDS=10V
Ta=25˚C
1.0
0.8
0.6
0.4
0.2
0
0 2 4 6 8 10
Gate to source voltage VGS (V)
RDS(on) VGS
6
ID=500mA
5
4
3
Ta=75˚C
2
25˚C
25˚C
1
0
0 4 8 12 16 20
Gate to source voltage VGS (V)
278


Features Silicon MOS FETs (Small Signal) 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching unit: mm I Features 5.0±0 .2 4.0±0.2 0.7±0.1 0.7±0.2 12.9± 0.5 G Low ON-resistance RDS(on) G High -speed switching G Allowing to be drive n directly by CMOS and TTL I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel te mperature Storage temperature Symbol VD S VGSO ID IDP PD Tch Tstg Ratings 80 20 ±0.5 ±1 750 150 −55 to +150 Unit V V A A mW °C °C 0.45+0.15 –0.1 2.5+ 0.6 –0.2 1 2 3 5.1±0.2 0.45+0.15 0.1 2.5+0.6 –0.2 1: Source 2: Drain 3: Gate JEDEC: TO-92 EIAJ: SC-43 TO-92 -A1 Package I Electrical Characteristi cs (Ta = 25°C) Parameter Drain to Sour ce cut-off current Gate to Source leaka ge current Drain to Source breakdown vo ltage Gate threshold voltage Drain to S ource ON-resistance Forward transfer ad mittance Symbol IDSS IGSS VDSS Vth RDS(on)*1 | Yfs | Coss ton *2 Conditions VDS = 60.
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